Microstructural investigation of pulsed-laser-deposited SrRuO3 films on Si with SrO buffer layers

Yuxi Chen, Junichi Koike, Takamitsu Higuchi, Setsuya Iwashita, Masaya Ishida, Tatsuya Shimoda

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Conductive SrRuO3 films were deposited on {001} Si substrates by pulsed-laser deposition using SrO as buffer layers. The microstructure and orientation relationships (ORs) of the constituting layers were investigated by X-ray diffraction, transmission electron microscopy, high-resolution electron microscopy and energy dispersive X-ray spectroscopy. Good epitaxial growth of SrO and SrRuO3 films on the Si substrates was achieved. Multiple domains were formed in the SrRuO3 films. The domain boundaries were nearly perpendicular to the interface between the SrRuO3 films and the SrO buffer layers. Three ORs among Si, SrO and SrRuO3 were observed, indicating a new OR between Si and SrO.

Original languageEnglish
Pages (from-to)L1305-L1307
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number12 A
Publication statusPublished - 2001 Dec 1


  • High-resolution electron microscopy
  • Interface
  • Microstructure
  • SrO buffer layers
  • SrRuO films

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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