The microstructures of 5 wt% SiO2-doped TZP, 5 wt% (SiO2 + 2 wt% MgO)-doped TZP, and 5 wt% (SiO2 + 2 wt% Al2O3)-doped TZP are characterized by high-resolution electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy. An amorphous phase is formed at multiple grain junctions but not along the grain-boundary faces in these three materials. A small addition of MgO and Al2O3 into the SiO2 phase results in a marked reduction in tensile ductility of SiO2-doped TZP. This reduction seems to correlate with segregation of magnesium or aluminum ions at grain boundaries and a resultant change in the chemical bonding state.
|Number of pages||6|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - 1998 Nov|
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry