Microstructural and magnetic characteristics of IrMn exchange-biased tunnel junctions

Andrew C.C. Yu, X. F. Han, J. Murai, Y. Ando, T. Miyazaki, K. Hiraga

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Tunneling magnetoresistance values above 20% and 40% were obtained for as-deposited and annealed tunnel junctions, Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al-oxide/CoFe/NiFe/Ta, respectively. Exchange biasing field increased from 270 to 550 Oe after annealing resulting from sharpening of the IrMn/CoFe interface. dV/dI vs. V curves showed asymmetric profiles, which were due to asymmetry of the CoFe/Al-oxide interfaces and difference in microstructure of the CoFe layers.

Original languageEnglish
Pages (from-to)130-133
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume240
Issue number1-3
DOIs
Publication statusPublished - 2002 Feb 1

Keywords

  • Annealing effect
  • Exchange biasing
  • Magnetoresistance
  • Microstructure
  • Transmission electron microscopy
  • Tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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