Microstructural analysis of the deformation range under nano-indentation in β-SiC

Hirotatsu Kishimoto, Kyeong Hwan Park, Sosuke Kondo, Kazumi Ozawa, Akira Kohyama

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

As a powerful tool to analyse microstructural evolution under irradiation and the interaction of moving dislocations with radiation-induced defects, a focused ion beam (FIB) method was applied to ion-irradiated SiC followed by the nano-indentation test. An FIB method has excellent capability to prepare thin foils from the area of interest with a high accuracy of location and wide flexibility in the sampling direction. These advantages are demonstrated in the application to Si ion-irradiated SiC by transmission electron microscope observation.

Original languageEnglish
Pages (from-to)515-517
Number of pages3
JournalJournal of Electron Microscopy
Volume53
Issue number5
DOIs
Publication statusPublished - 2004 Dec 1
Externally publishedYes

Keywords

  • FIB
  • Irradiation effects
  • Nano-indentation
  • SiC
  • TEM

ASJC Scopus subject areas

  • Instrumentation

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