Abstract
As a powerful tool to analyse microstructural evolution under irradiation and the interaction of moving dislocations with radiation-induced defects, a focused ion beam (FIB) method was applied to ion-irradiated SiC followed by the nano-indentation test. An FIB method has excellent capability to prepare thin foils from the area of interest with a high accuracy of location and wide flexibility in the sampling direction. These advantages are demonstrated in the application to Si ion-irradiated SiC by transmission electron microscope observation.
Original language | English |
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Pages (from-to) | 515-517 |
Number of pages | 3 |
Journal | Journal of Electron Microscopy |
Volume | 53 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2004 |
Externally published | Yes |
Keywords
- FIB
- Irradiation effects
- Nano-indentation
- SiC
- TEM
ASJC Scopus subject areas
- Instrumentation