Microstructural analysis of damaged layer introduced during chemo-mechanical polishing

Hideki Sako, Tamotsu Yamashita, Kentaro Tamura, Masayuki Sasaki, Masatake Nagaya, Takanori Kido, Kenji Kawata, Tomohisa Kato, Kazutoshi Kojima, Susumu Tsukimoto, Hirofumi Matsuhata, Makoto Kitabatake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    14 Citations (Scopus)

    Abstract

    Damaged layers, which are introduced during chemo-mechanical polishing (CMP) underneath the 4°off-cut 4H-SiC wafer surface and cause surface defects formations after epitaxial films growth, are investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). SEM observations show presence of small scratches on wafer surfaces after CMP process. The widths of such scratches are submicron meters, thus it is hard to detect them by optical microscopy. TEM observations show that high-density regions of dislocation loops exist below scratches and the widths of such dislocation loops are much wider than the morphological width. Details of the dislocation structure are also analyzed. It is shown that the high-density dislocation loops cause local surface roughening on the surface of the epitaxial film.

    Original languageEnglish
    Title of host publicationSilicon Carbide and Related Materials 2013
    EditorsHajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
    PublisherTrans Tech Publications Ltd
    Pages370-373
    Number of pages4
    ISBN (Print)9783038350101
    DOIs
    Publication statusPublished - 2014 Jan 1
    Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
    Duration: 2013 Sep 292013 Oct 4

    Publication series

    NameMaterials Science Forum
    Volume778-780
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752

    Other

    Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
    CountryJapan
    CityMiyazaki
    Period13/9/2913/10/4

    Keywords

    • Basal plane dislocation
    • Chemo-mechanical polishing
    • Transmission electron microscopy

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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  • Cite this

    Sako, H., Yamashita, T., Tamura, K., Sasaki, M., Nagaya, M., Kido, T., Kawata, K., Kato, T., Kojima, K., Tsukimoto, S., Matsuhata, H., & Kitabatake, M. (2014). Microstructural analysis of damaged layer introduced during chemo-mechanical polishing. In H. Okumura, H. Okumura, H. Harima, T. Kimoto, M. Yoshimoto, H. Watanabe, T. Hatayama, H. Matsuura, Y. Sano, & T. Funaki (Eds.), Silicon Carbide and Related Materials 2013 (pp. 370-373). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.370