Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies

Hirokazu Fukidome, Kei Tanaka, Masamichi Yoshimura, Kazuyuki Ueda, Fang Zhun Guo, Toyohiko Kinoshita, Keisuke Kobayashi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.

Original languageEnglish
Pages (from-to)4675-4679
Number of pages5
JournalSurface Science
Volume601
Issue number20 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Oct 15
Externally publishedYes

Keywords

  • Mirror electron microscopy
  • Oxidation
  • Photoemission electron microscopy
  • Silicon
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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