Microscopic identification of dopant atoms in Mn-doped GaAs layers

T. Tsuruoka, R. Tanimoto, N. Tachikawa, S. Ushioda, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Using cross-sectional scanning tunneling microscopy (XSTM), we have identified the dopant atoms in Mn-doped GaAs layers grown at 400 °C by molecular-beam epitaxy. The Mn-dopant atoms appeared as diffuse light areas superimposed on the background of As atomic rows in the STM images. The Mn acceptor concentration deduced from the STM images agreed well with the hole concentration determined by Hall measurements. No As antisite and associated defects were observed. These results indicate that Mn atoms are incorporated into the GaAs layer as electrically activated acceptors.

Original languageEnglish
Pages (from-to)79-82
Number of pages4
JournalSolid State Communications
Issue number2-3
Publication statusPublished - 2002 Jan 2


  • A. Mn-doped GaAs
  • C. Impurities in semiconductors
  • C. Scanning tunneling microscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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