Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells

J. Fujieda, R. Matsutani, J. Hamano, H. Yoshida, K. Arafune, S. Satoh, T. Tachibana, N. Ikeno, H. Lee, A. Ogura, T. Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A scanning capacitance microscopy (SCM) has been applied to the electrical characterization of passivation films for crystalline Si solar cells. An Y 2O3-Al2O3 system, which is a binary composition spread oxide film, was used as a fixed-charge-controlled passivation film. The flat-band voltages of the Y2O3-Al 2O3 system were determined from microscopic C-V curves measured by the SCM. The result was in agreement with that of a conventional C-V method. Additionally, the dV/dC images measured by the SCM were investigated for visualizing the spatial distribution of interface trap density.

Original languageEnglish
Title of host publicationIMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai
Pages74-75
Number of pages2
DOIs
Publication statusPublished - 2011 Aug 10
Externally publishedYes
Event9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011 - Osaka, Japan
Duration: 2011 May 192011 May 20

Publication series

NameIMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai

Conference

Conference9th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2011
CountryJapan
CityOsaka
Period11/5/1911/5/20

Keywords

  • SCM
  • fixed charge
  • passivation film
  • solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Fujieda, J., Matsutani, R., Hamano, J., Yoshida, H., Arafune, K., Satoh, S., Tachibana, T., Ikeno, N., Lee, H., Ogura, A., & Chikyow, T. (2011). Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells. In IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai (pp. 74-75). [5944851] (IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2011.5944851