Micropatterning of SiO2 film using organosilicon nanocluster as a precursor

Akira Watanabe, Mamoru Fujitsuka, Osamu Ito

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

The micropattern of SiO2 film was prepared by the photooxidation of an organosilicon nanocluster which consists of a three-dimensional Si-core and organic groups on the surface. By UV-irradiation in air, the organosilicon nanocluster film became optically transparent in the UV-vis region. As an intermediate during the photobleaching, a silyl silylene was observed by laser flash photolysis of organosilicon nanocluster. The FT-IR spectra showed the conversion of Si-Si bond to Si-O-Si bond and the elimination of organic substituent during the photooxidation. The XPS spectra of Si 2p region for the photooxidized film at room temperature showed a peak assigned to SiO2 at 103.4 eV. This is in contrast to a quasi-two-dimensional network polysilane which gives a peak of siloxane structure by photooxidation. The difference was explained by considering the three-dimensional Si-Si network structure of organosilicon nanocluster. The TGA analysis in air showed a rapid weight loss at 164 °C, and the weight remained nearly constant up to 1000 °C after the thermal oxidation. The micropattern of SiO2 was formed by the UV-irradiation of the organosilicon nanocluster film with photomask and the development using an organic solvent. The transparent micropattern showed excellent dimensional stability up to 500 °C.

Original languageEnglish
Pages (from-to)13-18
Number of pages6
JournalThin Solid Films
Volume354
Issue number1
DOIs
Publication statusPublished - 1999 Oct 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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