TY - GEN
T1 - Micro/nano glass press molding using silicon carbide molds fabricated by silicon lost molding
AU - Min, Kyung Oh
AU - Tanaka, Shuji
AU - Esashi, Masayoshi
PY - 2005/10/25
Y1 - 2005/10/25
N2 - Silicon carbide (SiC) molds for micro/nano glass press molding at high temperature were fabricated from a silicon molds. The silicon molds with the features of micro-optics were fabricated by photolithography and etching, and then SiC was deposited on the silicon mold. After the SiC surface was polished to a mirror surface, a SiC ceramic block was bonded with the SiC film using a nickel interlayer at 900°C. Finally, the silicon mold was etched away using the mixture of nitric acid and hydrofluoric acid. The surface roughness of the SiC mold is 1.2 nm Ra, which is almost identical with that of the silicon mold. This suggests that this process is promising to make the SiC mold for optical uses. Glass press molding was preliminarily performed at 400°C using the SiC mold coated with diamond-like carbon (DLC). Although some parts of the SiC film were peeled off due to poor SiC-SiC bonding quality, the features on the SiC mold were well transferred to the glass.
AB - Silicon carbide (SiC) molds for micro/nano glass press molding at high temperature were fabricated from a silicon molds. The silicon molds with the features of micro-optics were fabricated by photolithography and etching, and then SiC was deposited on the silicon mold. After the SiC surface was polished to a mirror surface, a SiC ceramic block was bonded with the SiC film using a nickel interlayer at 900°C. Finally, the silicon mold was etched away using the mixture of nitric acid and hydrofluoric acid. The surface roughness of the SiC mold is 1.2 nm Ra, which is almost identical with that of the silicon mold. This suggests that this process is promising to make the SiC mold for optical uses. Glass press molding was preliminarily performed at 400°C using the SiC mold coated with diamond-like carbon (DLC). Although some parts of the SiC film were peeled off due to poor SiC-SiC bonding quality, the features on the SiC mold were well transferred to the glass.
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U2 - 10.1109/MEMSYS.2005.1453970
DO - 10.1109/MEMSYS.2005.1453970
M3 - Conference contribution
AN - SCOPUS:26844472192
SN - 0780387325
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 475
EP - 478
BT - Proceedings of the 18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami - Technical Digest
T2 - 18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami
Y2 - 30 January 2005 through 3 February 2005
ER -