The device concept, fabrication, emission and focussing characteristics of the microelectron field emitter array with the focus lenses were discussed. The device was aimed at low-energy, multielectron beam lithography application. The device was also monolithically fabricated on conventional silicon on insulator (SOI) wafer using the Si microfabrication process. The emitter-lens leak current and the emitter-gate were found to be less then 1% compared with the emission current.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 May|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering