Microelectromechanical displacement sensing using InAs/AlGaSb heterostructures

Hiroshi Yamaguchi; Sen Miyashita; Yoshiro Hirayama

doi:10.1063/1.1537047

Microelectromechanical displacement sensing using InAs/AlGaSb heterostructures

Hiroshi Yamaguchi, Sen Miyashita, Yoshiro Hirayama

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

InAs/Al_0.5Ga_0.5Sb heterostructure displacement sensors with various InAs channel thicknesses were fabricated. The total thickness of the film was kept at 300 nm and top InAs thickness was varied from 20 to 8 nm to study the quantum size effect on the piezoresistance. Results indicated that the InAs thickness of 10 nm was sufficient to detect the cantilever displacement.

Original language	English
Pages (from-to)	394-396
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	3
DOIs	https://doi.org/10.1063/1.1537047
Publication status	Published - 2003 Jan 20
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1537047

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title = "Microelectromechanical displacement sensing using InAs/AlGaSb heterostructures",

abstract = "InAs/Al0.5Ga0.5Sb heterostructure displacement sensors with various InAs channel thicknesses were fabricated. The total thickness of the film was kept at 300 nm and top InAs thickness was varied from 20 to 8 nm to study the quantum size effect on the piezoresistance. Results indicated that the InAs thickness of 10 nm was sufficient to detect the cantilever displacement.",

author = "Hiroshi Yamaguchi and Sen Miyashita and Yoshiro Hirayama",

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AU - Miyashita, Sen

AU - Hirayama, Yoshiro

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Y1 - 2003/1/20

N2 - InAs/Al0.5Ga0.5Sb heterostructure displacement sensors with various InAs channel thicknesses were fabricated. The total thickness of the film was kept at 300 nm and top InAs thickness was varied from 20 to 8 nm to study the quantum size effect on the piezoresistance. Results indicated that the InAs thickness of 10 nm was sufficient to detect the cantilever displacement.

AB - InAs/Al0.5Ga0.5Sb heterostructure displacement sensors with various InAs channel thicknesses were fabricated. The total thickness of the film was kept at 300 nm and top InAs thickness was varied from 20 to 8 nm to study the quantum size effect on the piezoresistance. Results indicated that the InAs thickness of 10 nm was sufficient to detect the cantilever displacement.

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Microelectromechanical displacement sensing using InAs/AlGaSb heterostructures

Abstract

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