Microelectromechanical displacement sensing using InAs/AlGaSb heterostructures

Hiroshi Yamaguchi, Sen Miyashita, Yoshiro Hirayama

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


InAs/Al0.5Ga0.5Sb heterostructure displacement sensors with various InAs channel thicknesses were fabricated. The total thickness of the film was kept at 300 nm and top InAs thickness was varied from 20 to 8 nm to study the quantum size effect on the piezoresistance. Results indicated that the InAs thickness of 10 nm was sufficient to detect the cantilever displacement.

Original languageEnglish
Pages (from-to)394-396
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2003 Jan 20
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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