InAs/Al0.5Ga0.5Sb heterostructure displacement sensors with various InAs channel thicknesses were fabricated. The total thickness of the film was kept at 300 nm and top InAs thickness was varied from 20 to 8 nm to study the quantum size effect on the piezoresistance. Results indicated that the InAs thickness of 10 nm was sufficient to detect the cantilever displacement.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Jan 20|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)