Microcrystalline/amorphous thin Si films deposition by a newly developed dual injection system employing hydrogen plasma and silicon radicals at low temperature (300°C) chemical vapor deposition process

Toru Takeda, Kouji Tanaka, Hirotada Inoue, Masaki Hirayama, Toshirou Tsumori, Herzl Aharoni, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Low temperature (300°C) deposition of thin microcrystalline/amorphous silicon films by using newly developed single shower, dual injection, microwave excited high density plasma (1011 cm-3) system is described. This is an original setup based on an experimental modification of a dual shower system that was reported by us earlier. For the first time, for this system, experimental results are presented correlating between the deposition and plasma parameters with the resulting Si films atomic structure. The results consistent interdependence enables to pre-determine, in a wide range, by design, the growth of microcrystalline or amorphous thin Si films, by setting the proper deposition conditions for each film type.

Original languageEnglish
Pages (from-to)2542-2553
Number of pages12
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24

Keywords

  • Amorphous silicon
  • Low temperature deposition
  • Microcrystalline silicon
  • Microwave plasma

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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