Microcrystalline Si 1-x Ge x, deposited by magnetron sputtering

A. Hiroe, T. Goto, A. Teramoto, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Microcrystalline Si 1-xGe x (x-0.8) films have been deposited by RF magnetron sputtering with source frequency of 100MHz. Crystallinity of deposited films has been evaluated by spectroscopic ellipsometry. Detailed investigation on the deposition behavior has been carried out, and it was found out that threshold temperature for crystalline phase formation is about 300°C. At the substrate temperature of 300°C crystallinity depends on film thickness, i.e. as film becomes thicker, crystallinity increases from less than 5% to about 60%. On the other hand, at substrate temperature of 350°C, crystalline formation begins to take place almost from the beginning of deposition. Nucleation site density is lower for 300°C, which in turn results in the higher surface crystallinity compared with the films deposited at 350°C. Substrate bias effect on deposition behavior was also investigated. Substrate bias improves the crystallinity of the films deposited at 300°C while it actually damages crystalline phase formed at 350°C.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
Number of pages10
Publication statusPublished - 2008 Dec 1
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 16

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


OtherThin Film Transistors 9, TFT 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI

ASJC Scopus subject areas

  • Engineering(all)

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