Micro-XRD investigation of fine-pitch Cu-TSV induced thermo-mechanical stress in high-density 3D-LSI

M. Murugesan, T. Fukushima, J. C. Bea, K. W. Lee, M. Koyanagi, Y. Imai, S. Kimura, T. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

3D-LSI stack containing diametrically highly-scaled through-silicon-vias (TSVs) with diameter 2μm as well as conventional 20 μm-width Cu-TSVs were carefully studied for the thermo-mechanical stress induced by Cu-TSVs via micro-X-ray diffraction using synchrotron radiation at Spring-8. It was observed that the TSV diameter has huge impact on the magnitude of resultant thermo-mechanical stress. The 20 μm-width Cu-TSV has induced more than-1500 MPa of stress in the vicinal Si, while the 2 μmwidth Cu-TSV induced less than-10 MPa of compressive stress in the surrounding Si. Therefore by decreasing the TSV diameter, one can virtually eliminate the thermo-mechanical stress induced by TSV.

Original languageEnglish
Title of host publication2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984725
DOIs
Publication statusPublished - 2014 Jan 1
EventInternational 3D Systems Integration Conference, 3DIC 2014 - Kinsdale, Ireland
Duration: 2014 Dec 12014 Dec 3

Publication series

Name2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings

Other

OtherInternational 3D Systems Integration Conference, 3DIC 2014
CountryIreland
CityKinsdale
Period14/12/114/12/3

Keywords

  • Fine-pitch
  • Micro - X-ray diffraction
  • Thermo-mechanical stress
  • Through-Si-via

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture

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