Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering

K. Tajima, W. Shin, M. Nishibori, T. Itoh, N. Izu, I. Matsubara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Micro-thermoelectric hydrogen sensor working with the combination of the thermoelectric effect of phosphorus-doped SiGe thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation has been fabricated. Sensitivity of hydrogen gas of the device was improved by doping the SiGe thermoelectric thin film deposited by helicon sputtering. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationSensors, Actuators, and Microsystems
PublisherElectrochemical Society Inc.
Pages23-27
Number of pages5
Edition21
ISBN (Electronic)9781566775007
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventSensors, Actuators, and Microsystems - 208th Electrochemical Society Meeting - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

Publication series

NameECS Transactions
Number21
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSensors, Actuators, and Microsystems - 208th Electrochemical Society Meeting
Country/TerritoryUnited States
CityLos Angeles, CA
Period05/10/1605/10/21

ASJC Scopus subject areas

  • Engineering(all)

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