Micro-texture dependence of stress-induced migration of electroplated copper thin film interconnections used for 3D integration

Ken Suzuki, Hideo Miura, Osamu Asai, Ryosuke Furuya, Jaeuk Sung, Naokazu Murata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Effect of the micro texture of electroplated copper thin film interconnections on stress-induced migration was investigated experimentally and theoretically. The micro texture of electroplated copper thin films changed drastically as a function of the annealing temperature after the electroplating. However, stress-induced migration was activated even though the thin film interconnection was kept at room temperature after annealing. As a result, voids and hillocks appeared on the thin film interconnection. This is because high residual stress was caused by shrinkage of the thin film interconnection due to the densification caused by recrystallization. Molecular dynamics simulations showed that the diffusivity of copper atoms along grain boundaries with low crystallinity was enhanced significantly by high tensile residual stress. Therefore, the grain boundary diffusion accelerated by tensile residual stress is the main reason for the formation of hillocks and voids in the thin film interconnection after annealing.

Original languageEnglish
Title of host publication2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages264-267
Number of pages4
DOIs
Publication statusPublished - 2013 Dec 31
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 2013 Sep 32013 Sep 5

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
CountryUnited Kingdom
CityGlasgow
Period13/9/313/9/5

Keywords

  • Electroplated copper thin film interconnection
  • Reliability
  • Stress-induced migration

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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