Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, W. Ono, F. Nakajima, R. Katayama, K. Onabe

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13 Citations (Scopus)


We have measured micro-photoluminescence (PL) spectra of nitrogen delta (δ)-doped GaAs with various concentrations. In nitrogen δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1 μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices.

Original languageEnglish
Pages (from-to)73-75
Number of pages3
JournalJournal of Crystal Growth
Issue numberSPEC. ISS
Publication statusPublished - 2007 Jan


  • A1. Doping optical microscopy
  • A2. Metalorganic vapor phase epitaxy
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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