We have measured micro-photoluminescence (PL) spectra of nitrogen delta (δ)-doped GaAs with various concentrations. In nitrogen δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1 μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices.
- A1. Doping optical microscopy
- A2. Metalorganic vapor phase epitaxy
- B2. Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry