Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

Y. Endo; K. Tanioka; Y. Hijikata; H. Yaguchi; S. Yoshida; M. Yoshita; H. Akiyama; W. Ono; F. Nakajima; R. Katayama; K. Onabe

doi:10.1016/j.jcrysgro.2006.10.019

Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, W. Ono, F. Nakajima, R. Katayama, K. Onabe

Materials Design Division

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13 Citations (Scopus)

Abstract

We have measured micro-photoluminescence (PL) spectra of nitrogen delta (δ)-doped GaAs with various concentrations. In nitrogen δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1 μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices.

Original language	English
Pages (from-to)	73-75
Number of pages	3
Journal	Journal of Crystal Growth
Volume	298
Issue number	SPEC. ISS
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.10.019
Publication status	Published - 2007 Jan

Keywords

A1. Doping optical microscopy
A2. Metalorganic vapor phase epitaxy
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.10.019

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@article{6065600b4d22433fbca3fc9bfd6f87eb,

title = "Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy",

abstract = "We have measured micro-photoluminescence (PL) spectra of nitrogen delta (δ)-doped GaAs with various concentrations. In nitrogen δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1 μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices.",

keywords = "A1. Doping optical microscopy, A2. Metalorganic vapor phase epitaxy, B2. Semiconducting III-V materials",

author = "Y. Endo and K. Tanioka and Y. Hijikata and H. Yaguchi and S. Yoshida and M. Yoshita and H. Akiyama and W. Ono and F. Nakajima and R. Katayama and K. Onabe",

note = "Funding Information: This study was partially supported by Grant-in-Aid for Scientific Research (C) (no. 17560004), Japan Society for the Promotion of Science.",

year = "2007",

month = jan,

doi = "10.1016/j.jcrysgro.2006.10.019",

language = "English",

volume = "298",

pages = "73--75",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "SPEC. ISS",

}

TY - JOUR

T1 - Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

AU - Endo, Y.

AU - Tanioka, K.

AU - Hijikata, Y.

AU - Yaguchi, H.

AU - Yoshida, S.

AU - Yoshita, M.

AU - Akiyama, H.

AU - Ono, W.

AU - Nakajima, F.

AU - Katayama, R.

AU - Onabe, K.

N1 - Funding Information: This study was partially supported by Grant-in-Aid for Scientific Research (C) (no. 17560004), Japan Society for the Promotion of Science.

PY - 2007/1

Y1 - 2007/1

N2 - We have measured micro-photoluminescence (PL) spectra of nitrogen delta (δ)-doped GaAs with various concentrations. In nitrogen δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1 μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices.

AB - We have measured micro-photoluminescence (PL) spectra of nitrogen delta (δ)-doped GaAs with various concentrations. In nitrogen δ-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. In contrast, almost the same spectra were obtained for nitrogen δ-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. The micro-PL study shows that there are no more than a few isoelectronic traps within a diameter of ∼1 μm. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices.

KW - A1. Doping optical microscopy

KW - A2. Metalorganic vapor phase epitaxy

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=33846448766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846448766&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.10.019

DO - 10.1016/j.jcrysgro.2006.10.019

M3 - Article

AN - SCOPUS:33846448766

SN - 0022-0248

VL - 298

SP - 73

EP - 75

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SPEC. ISS

ER -

Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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