Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

C. Watatani, Keiichi Edamatsu, T. Itoh, H. Hayashi, S. Shimomura, S. Hiyamizu

Research output: Contribution to conferencePaper

Abstract

Recent development of micro-photoluminescence spectroscopy has enabled the authors to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. In this paper, the authors report on the micro-photoluminescence spectra of single GaAs/AlGaAs quantum dots grown on a (411)A surface of a GaAs substrate. They have also observed sharp luminescence lines originating not only from the lowest state of the confined exciton, but also from the excited states depending on the excitation power density.

Original languageEnglish
Pages57-58
Number of pages2
Publication statusPublished - 2000 Dec 1
Externally publishedYes
EventQuantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA
Duration: 2000 May 72000 May 12

Other

OtherQuantum Electronics and Laser Science Conference (QELS 2000)
CitySan Francisco, CA, USA
Period00/5/700/5/12

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Watatani, C., Edamatsu, K., Itoh, T., Hayashi, H., Shimomura, S., & Hiyamizu, S. (2000). Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface. 57-58. Paper presented at Quantum Electronics and Laser Science Conference (QELS 2000), San Francisco, CA, USA, .