MgxZn1-xO films with a low residual donor concentration (<1015 cm-3) grown by molecular beam epitaxy

Shunsuke Akasaka; Ken Nakahara; Atsushi Tsukazaki; Akira Ohtomo; Masashi Kawasaki

doi:10.1143/APEX.3.071101

Mg_xZn_1-xO films with a low residual donor concentration (<10¹⁵ cm^-3) grown by molecular beam epitaxy

Shunsuke Akasaka, Ken Nakahara, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki

Materials Property Division

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We have grown undoped Mg_xZn_1-xO films on Zn-polar ZnO substrates by using a plasma-assisted molecular beam epitaxy technique. The residual donor concentration (N_D) was evaluated by capacitance-voltage measurements of the Schottky junctions formed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films as electrodes. Increasing the Zn/O flux ratio during the growth reduced the value of ND to reach (2-7) x 10¹⁴ cm^- for Mg_xZn_1-xO films with MgO molar fractions x ranging from 0 to 0.39. These Mg _xZn_1-xO films with low residual N_D values would be suitable host materials for p-type doping.

Original language	English
Article number	071101
Journal	Applied Physics Express
Volume	3
Issue number	7
DOIs	https://doi.org/10.1143/APEX.3.071101
Publication status	Published - 2010 Jul

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{9c8feb9c0b9641efa06297fc0d50481e,

title = "MgxZn1-xO films with a low residual donor concentration (<1015 cm-3) grown by molecular beam epitaxy",

abstract = "We have grown undoped MgxZn1-xO films on Zn-polar ZnO substrates by using a plasma-assisted molecular beam epitaxy technique. The residual donor concentration (ND) was evaluated by capacitance-voltage measurements of the Schottky junctions formed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films as electrodes. Increasing the Zn/O flux ratio during the growth reduced the value of ND to reach (2-7) x 1014 cm- for MgxZn1-xO films with MgO molar fractions x ranging from 0 to 0.39. These Mg xZn1-xO films with low residual ND values would be suitable host materials for p-type doping.",

author = "Shunsuke Akasaka and Ken Nakahara and Atsushi Tsukazaki and Akira Ohtomo and Masashi Kawasaki",

year = "2010",

month = jul,

doi = "10.1143/APEX.3.071101",

language = "English",

volume = "3",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - MgxZn1-xO films with a low residual donor concentration (<1015 cm-3) grown by molecular beam epitaxy

AU - Akasaka, Shunsuke

AU - Nakahara, Ken

AU - Tsukazaki, Atsushi

AU - Ohtomo, Akira

AU - Kawasaki, Masashi

PY - 2010/7

Y1 - 2010/7

N2 - We have grown undoped MgxZn1-xO films on Zn-polar ZnO substrates by using a plasma-assisted molecular beam epitaxy technique. The residual donor concentration (ND) was evaluated by capacitance-voltage measurements of the Schottky junctions formed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films as electrodes. Increasing the Zn/O flux ratio during the growth reduced the value of ND to reach (2-7) x 1014 cm- for MgxZn1-xO films with MgO molar fractions x ranging from 0 to 0.39. These Mg xZn1-xO films with low residual ND values would be suitable host materials for p-type doping.

AB - We have grown undoped MgxZn1-xO films on Zn-polar ZnO substrates by using a plasma-assisted molecular beam epitaxy technique. The residual donor concentration (ND) was evaluated by capacitance-voltage measurements of the Schottky junctions formed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films as electrodes. Increasing the Zn/O flux ratio during the growth reduced the value of ND to reach (2-7) x 1014 cm- for MgxZn1-xO films with MgO molar fractions x ranging from 0 to 0.39. These Mg xZn1-xO films with low residual ND values would be suitable host materials for p-type doping.

UR - http://www.scopus.com/inward/record.url?scp=77954477905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954477905&partnerID=8YFLogxK

U2 - 10.1143/APEX.3.071101

DO - 10.1143/APEX.3.071101

M3 - Article

AN - SCOPUS:77954477905

VL - 3

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 7

M1 - 071101

ER -

Mg_xZn_1-xO films with a low residual donor concentration (<10¹⁵ cm^-3) grown by molecular beam epitaxy

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