MgxZn1-xO films with a low residual donor concentration (<1015 cm-3) grown by molecular beam epitaxy

Shunsuke Akasaka, Ken Nakahara, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki

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20 Citations (Scopus)


We have grown undoped MgxZn1-xO films on Zn-polar ZnO substrates by using a plasma-assisted molecular beam epitaxy technique. The residual donor concentration (ND) was evaluated by capacitance-voltage measurements of the Schottky junctions formed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films as electrodes. Increasing the Zn/O flux ratio during the growth reduced the value of ND to reach (2-7) x 1014 cm- for MgxZn1-xO films with MgO molar fractions x ranging from 0 to 0.39. These Mg xZn1-xO films with low residual ND values would be suitable host materials for p-type doping.

Original languageEnglish
Article number071101
JournalApplied Physics Express
Issue number7
Publication statusPublished - 2010 Jul

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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