MgxZn1-xO films with a low residual donor concentration (<1015 cm-3) grown by molecular beam epitaxy

Shunsuke Akasaka; Ken Nakahara; Atsushi Tsukazaki; Akira Ohtomo; Masashi Kawasaki

doi:10.1143/APEX.3.071101

Mg_xZn_1-xO films with a low residual donor concentration (<10¹⁵ cm^-3) grown by molecular beam epitaxy

Shunsuke Akasaka, Ken Nakahara, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki

Materials Property Division

Research output: Contribution to journal › Article

18 Citations (Scopus)

Abstract

We have grown undoped Mg_xZn_1-xO films on Zn-polar ZnO substrates by using a plasma-assisted molecular beam epitaxy technique. The residual donor concentration (N_D) was evaluated by capacitance-voltage measurements of the Schottky junctions formed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films as electrodes. Increasing the Zn/O flux ratio during the growth reduced the value of ND to reach (2-7) x 10¹⁴ cm^- for Mg_xZn_1-xO films with MgO molar fractions x ranging from 0 to 0.39. These Mg _xZn_1-xO films with low residual N_D values would be suitable host materials for p-type doping.

Original language	English
Article number	071101
Journal	Applied Physics Express
Volume	3
Issue number	7
DOIs	https://doi.org/10.1143/APEX.3.071101
Publication status	Published - 2010 Jul 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Akasaka, S., Nakahara, K., Tsukazaki, A., Ohtomo, A., & Kawasaki, M. (2010). Mg_xZn_1-xO films with a low residual donor concentration (<10¹⁵ cm^-3) grown by molecular beam epitaxy. Applied Physics Express, 3(7), [071101]. https://doi.org/10.1143/APEX.3.071101

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