MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions with perpendicular easy axis

Hideo Sato, Michihiko Yamanouchi, Shoji Ikeda, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

94 Citations (Scopus)

Abstract

Junction size (D) dependence of thermal stability factor (Δ) and intrinsic critical current (IC0) were investigated for MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions (MTJs) having a CoFeB reference layer and a synthetic ferrimagnetic (SyF) reference layer. Δ of the recording structure shows almost constant value down to 40 nm, whereas IC0 shows a linear dependence on the recording layer area, as similarly observed in recording structure with single-interface. Average absolute intrinsic critical current density is 3.5 MA/cm2, which is comparable to previously reported value for recording structure with single-interface. A MgO/CoFeB(1.4)/Ta(0.4)/CoFeB(1.0)/MgO double-interface recording structure in MTJ with SyF reference layer shows Δ of 59 at D=29 nm.

Original languageEnglish
Article number6558971
Pages (from-to)4437-4440
Number of pages4
JournalIEEE Transactions on Magnetics
Volume49
Issue number7
DOIs
Publication statusPublished - 2013

Keywords

  • Intrinsic critical current
  • magnetic tunnel junction
  • perpendicular magnetic anisotropy
  • spintronics
  • thermal stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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