MgO layer thickness dependence of structure and magnetic properties of L1 0-FePt/MgO/GaAs structures

Rento Ohsugi, Makoto Kohda, Takeshi Seki, Akihiko Ohtsu, Masaki Mizuguchi, Koki Takanashi, Junsaku Nitta

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6 Citations (Scopus)

Abstract

We investigated the MgO layer thickness dependences of the structure and magnetic properties of L1 0-FePt/MgO/GaAs structures. To examine how the crystallinity and growth morphology of the MgO layer affect the L1 0-FePt layer, two kinds of preparation method were employed for MgO deposition: electron beam (EB) evaporation and sputter deposition. The MgO layer deposited by EB evaporation included a large strain because of the cube-on-cube epitaxial relationship despite a large lattice mismatch between MgO and GaAs. For the MgO layer prepared by sputtering, on the other hand, an amorphous MgO layer was initially grown on the GaAs substrate. Subsequently, a crystalline MgO layer was grown in the (001) direction. In the case of the EB-deposited MgO, as the MgO layer thickness increased, the degree of chemical order of the L1 0-FePt layer increased from 55 to 81% owing to the improvement of the crystallinity of the MgO layer. The improvement of chemical order also led to the increase in the remanent magnetization of L1 0-FePt from 84 to 98%.

Original languageEnglish
Article number02BM05
JournalJapanese journal of applied physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - 2012 Feb 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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