MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. Gan, K. Miura, H. Hasegawa, J. Hayakawa, F. Matsukura, H. Ohno

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119 Citations (Scopus)

Abstract

The authors studied an effect of ferromagnetic (Co20 Fe 60 B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at annealing temperature (Ta) of 200 °C and then decreased rapidly at Ta over 250 °C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture resulting from diffusion of B into Pd layers. MTJs which were in situ annealed at 350 °C just after depositing bottom CoFe/Pd multilayer showed TMR ratio of 78% by postannealing at Ta =200 °C.

Original languageEnglish
Article number232516
JournalApplied Physics Letters
Volume95
Issue number23
DOIs
Publication statusPublished - 2009 Dec 18

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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