MgB 2 thin films with high J c fabricated on Al tape substrates by electron beam evaporation

K. Yonekura, T. Fujiyoshi, T. Sueyoshi, K. Okita, T. Doi, K. Yoshihara, S. Awaji, K. Watanabe

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

MgB 2 thin films on nontextured Al tape substrates were fabricated by electron beam evaporation. MgB 2 thin film with a boron buffer layer of about 3 nm thickness was also prepared. The thickness of MgB 2 thin films is 250 nm. The obtained MgB 2 thin films on Al tape substrates were boron rich in composition and c-axis oriented. The self-field J c of the MgB 2 thin film with a boron buffer layer at 10 K and 20 K are 9.45 × 10 10 A/m 2 and 4.85 × 10 10 A/m 2, respectively. The magnetic field reduction of J c in MgB 2 thin films on Al tape substrates is smaller compared with MgB 2 wires fabricated by a powder-in-tube method and MgB 2 thin films fabricated by a hybrid physical chemical vapor deposition method. The field angular dependences of J c of MgB 2 thin films on Al tape substrates are similar to that of the MgB 2 thin film on Si, which was reported previously. This result indicates that grain boundaries act as a dominant pinning center in MgB 2 thin films on Al tape substrates.

Original languageEnglish
Pages (from-to)108-110
Number of pages3
JournalPhysica C: Superconductivity and its applications
Volume480
DOIs
Publication statusPublished - 2012 Oct 1

Keywords

  • Al tape substrates
  • Electron beam evaporation
  • High critical current density
  • MgB thin films
  • MgB wire

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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