Abstract
MgB 2 thin films on nontextured Al tape substrates were fabricated by electron beam evaporation. MgB 2 thin film with a boron buffer layer of about 3 nm thickness was also prepared. The thickness of MgB 2 thin films is 250 nm. The obtained MgB 2 thin films on Al tape substrates were boron rich in composition and c-axis oriented. The self-field J c of the MgB 2 thin film with a boron buffer layer at 10 K and 20 K are 9.45 × 10 10 A/m 2 and 4.85 × 10 10 A/m 2, respectively. The magnetic field reduction of J c in MgB 2 thin films on Al tape substrates is smaller compared with MgB 2 wires fabricated by a powder-in-tube method and MgB 2 thin films fabricated by a hybrid physical chemical vapor deposition method. The field angular dependences of J c of MgB 2 thin films on Al tape substrates are similar to that of the MgB 2 thin film on Si, which was reported previously. This result indicates that grain boundaries act as a dominant pinning center in MgB 2 thin films on Al tape substrates.
Original language | English |
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Pages (from-to) | 108-110 |
Number of pages | 3 |
Journal | Physica C: Superconductivity and its applications |
Volume | 480 |
DOIs | |
Publication status | Published - 2012 Oct 1 |
Keywords
- Al tape substrates
- Electron beam evaporation
- High critical current density
- MgB thin films
- MgB wire
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering