Mg-induced Si(111)3 × 1 structure studied by photoelectron spectroscopy

K. S. An; R. J. Park; J. S. Kim; C. Y. Park; C. Y. Kim; J. W. Chung; T. Abukawa; S. Kono; T. Kinoshita; A. Kakizaki; T. Ishii

doi:10.1016/0039-6028(95)80037-9

Mg-induced Si(111)3 × 1 structure studied by photoelectron spectroscopy

K. S. An, R. J. Park, J. S. Kim, C. Y. Park, C. Y. Kim, J. W. Chung, T. Abukawa, S. Kono, T. Kinoshita, A. Kakizaki, T. Ishii

Division of Inorganic Material Research

Research output: Contribution to journal › Article

45 Citations (Scopus)

Abstract

By means of angle resolved photoelectron spectroscopy using synchrotron radiation, we have measured the valence band and surface sensitive Si 2p core-level spectra for the Si(111)3 × 1Mg surface. The dispersion of the valence band shows the fact that this surface has a semiconducting property and two surface states in the projected bulk band gap at the K̄ point. From the fitting results of the Si 2p core-level spectra, we find that the two surface shifted core-level components, S′₁ and S′₂ stem from the Si atom with single dangling bond and the Si atom bonding to the Mg atom, respectively. From experimental observations we suggest that the Si(111)3 × 1Mg structure is formed by ordering of Mg atoms on the ideal Si(111)1 × 1 surface, not by reconstruction of Si atoms of the substrate.

Original language	English
Pages (from-to)	L789-L794
Journal	Surface Science
Volume	337
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(95)80037-9
Publication status	Published - 1995 Aug 20

Keywords

Angle resolved photoemission
Low index single crystal surfaces
Magnesium
Semiconducting surfaces
Silicon
Soft X-ray photoelectron spectroscopy
Surface electronic phenomena

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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@article{94d088ac4de14511afc400e6768e3859,

title = "Mg-induced Si(111)3 × 1 structure studied by photoelectron spectroscopy",

abstract = "By means of angle resolved photoelectron spectroscopy using synchrotron radiation, we have measured the valence band and surface sensitive Si 2p core-level spectra for the Si(111)3 × 1Mg surface. The dispersion of the valence band shows the fact that this surface has a semiconducting property and two surface states in the projected bulk band gap at the {\=K} point. From the fitting results of the Si 2p core-level spectra, we find that the two surface shifted core-level components, S′1 and S′2 stem from the Si atom with single dangling bond and the Si atom bonding to the Mg atom, respectively. From experimental observations we suggest that the Si(111)3 × 1Mg structure is formed by ordering of Mg atoms on the ideal Si(111)1 × 1 surface, not by reconstruction of Si atoms of the substrate.",

keywords = "Angle resolved photoemission, Low index single crystal surfaces, Magnesium, Semiconducting surfaces, Silicon, Soft X-ray photoelectron spectroscopy, Surface electronic phenomena",

author = "An, {K. S.} and Park, {R. J.} and Kim, {J. S.} and Park, {C. Y.} and Kim, {C. Y.} and Chung, {J. W.} and T. Abukawa and S. Kono and T. Kinoshita and A. Kakizaki and T. Ishii",

year = "1995",

month = aug,

day = "20",

doi = "10.1016/0039-6028(95)80037-9",

language = "English",

volume = "337",

pages = "L789--L794",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Mg-induced Si(111)3 × 1 structure studied by photoelectron spectroscopy

AU - An, K. S.

AU - Park, R. J.

AU - Kim, J. S.

AU - Park, C. Y.

AU - Kim, C. Y.

AU - Chung, J. W.

AU - Abukawa, T.

AU - Kono, S.

AU - Kinoshita, T.

AU - Kakizaki, A.

AU - Ishii, T.

PY - 1995/8/20

Y1 - 1995/8/20

N2 - By means of angle resolved photoelectron spectroscopy using synchrotron radiation, we have measured the valence band and surface sensitive Si 2p core-level spectra for the Si(111)3 × 1Mg surface. The dispersion of the valence band shows the fact that this surface has a semiconducting property and two surface states in the projected bulk band gap at the K̄ point. From the fitting results of the Si 2p core-level spectra, we find that the two surface shifted core-level components, S′1 and S′2 stem from the Si atom with single dangling bond and the Si atom bonding to the Mg atom, respectively. From experimental observations we suggest that the Si(111)3 × 1Mg structure is formed by ordering of Mg atoms on the ideal Si(111)1 × 1 surface, not by reconstruction of Si atoms of the substrate.

AB - By means of angle resolved photoelectron spectroscopy using synchrotron radiation, we have measured the valence band and surface sensitive Si 2p core-level spectra for the Si(111)3 × 1Mg surface. The dispersion of the valence band shows the fact that this surface has a semiconducting property and two surface states in the projected bulk band gap at the K̄ point. From the fitting results of the Si 2p core-level spectra, we find that the two surface shifted core-level components, S′1 and S′2 stem from the Si atom with single dangling bond and the Si atom bonding to the Mg atom, respectively. From experimental observations we suggest that the Si(111)3 × 1Mg structure is formed by ordering of Mg atoms on the ideal Si(111)1 × 1 surface, not by reconstruction of Si atoms of the substrate.

KW - Angle resolved photoemission

KW - Low index single crystal surfaces

KW - Magnesium

KW - Semiconducting surfaces

KW - Silicon

KW - Soft X-ray photoelectron spectroscopy

KW - Surface electronic phenomena

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U2 - 10.1016/0039-6028(95)80037-9

DO - 10.1016/0039-6028(95)80037-9

M3 - Article

AN - SCOPUS:0029359013

VL - 337

SP - L789-L794

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-2

ER -