MFIS structure device with a low dielectric constant ferroelectric Sr 2(Ta1-x,Nbx)2O7 formed by plasma physical vapor deposition and oxygen radical treatment

Ichirou Takahashi; Hiroyuki Sakurai; Tatsufumi Isogai; Kiyoshi Funaiwa; Masaki Hirayama; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1080/10584580490892665

MFIS structure device with a low dielectric constant ferroelectric Sr ₂(Ta_1-x,Nb_x)₂O₇ formed by plasma physical vapor deposition and oxygen radical treatment

Ichirou Takahashi, Hiroyuki Sakurai, Tatsufumi Isogai, Kiyoshi Funaiwa, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A low dielectric constant ferroelectric Sr₂(Ta _1-x,Nb_x)₂O₇ film formation technology which is applied to FFRAM has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and microwave-excited (2.45 GHz) high-density (> 10¹² cm^-3) low electron temperature (< 1 eV) Kr/O₂ plasma (oxygen radical treatment). Oxygen radical treatment can oxidize STN effectively at 400°C. Furthermore, we have successfully developed a new technology that crystallizes a ferroelectric material on an insulator layer such as SiO ₂ and Si₃N₄ directly by oxygen radical treatment. Using this technology, MFIS device operation has been successfully achieved and its retention time is more than 24 hours.

Original language	English
Pages (from-to)	29-38
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	65
DOIs	https://doi.org/10.1080/10584580490892665
Publication status	Published - 2004

Keywords

Crystallization of ferroelectric on SiO
MFIS structure
Oxygen radical treatment

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584580490892665

Cite this

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title = "MFIS structure device with a low dielectric constant ferroelectric Sr 2(Ta1-x,Nbx)2O7 formed by plasma physical vapor deposition and oxygen radical treatment",

abstract = "A low dielectric constant ferroelectric Sr2(Ta 1-x,Nbx)2O7 film formation technology which is applied to FFRAM has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and microwave-excited (2.45 GHz) high-density (> 1012 cm-3) low electron temperature (< 1 eV) Kr/O2 plasma (oxygen radical treatment). Oxygen radical treatment can oxidize STN effectively at 400°C. Furthermore, we have successfully developed a new technology that crystallizes a ferroelectric material on an insulator layer such as SiO 2 and Si3N4 directly by oxygen radical treatment. Using this technology, MFIS device operation has been successfully achieved and its retention time is more than 24 hours.",

keywords = "Crystallization of ferroelectric on SiO, MFIS structure, Oxygen radical treatment",

author = "Ichirou Takahashi and Hiroyuki Sakurai and Tatsufumi Isogai and Kiyoshi Funaiwa and Masaki Hirayama and Akinobu Teramoto and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2004",

doi = "10.1080/10584580490892665",

language = "English",

volume = "65",

pages = "29--38",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - MFIS structure device with a low dielectric constant ferroelectric Sr 2(Ta1-x,Nbx)2O7 formed by plasma physical vapor deposition and oxygen radical treatment

AU - Takahashi, Ichirou

AU - Sakurai, Hiroyuki

AU - Isogai, Tatsufumi

AU - Funaiwa, Kiyoshi

AU - Hirayama, Masaki

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2004

Y1 - 2004

N2 - A low dielectric constant ferroelectric Sr2(Ta 1-x,Nbx)2O7 film formation technology which is applied to FFRAM has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and microwave-excited (2.45 GHz) high-density (> 1012 cm-3) low electron temperature (< 1 eV) Kr/O2 plasma (oxygen radical treatment). Oxygen radical treatment can oxidize STN effectively at 400°C. Furthermore, we have successfully developed a new technology that crystallizes a ferroelectric material on an insulator layer such as SiO 2 and Si3N4 directly by oxygen radical treatment. Using this technology, MFIS device operation has been successfully achieved and its retention time is more than 24 hours.

AB - A low dielectric constant ferroelectric Sr2(Ta 1-x,Nbx)2O7 film formation technology which is applied to FFRAM has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and microwave-excited (2.45 GHz) high-density (> 1012 cm-3) low electron temperature (< 1 eV) Kr/O2 plasma (oxygen radical treatment). Oxygen radical treatment can oxidize STN effectively at 400°C. Furthermore, we have successfully developed a new technology that crystallizes a ferroelectric material on an insulator layer such as SiO 2 and Si3N4 directly by oxygen radical treatment. Using this technology, MFIS device operation has been successfully achieved and its retention time is more than 24 hours.

KW - Crystallization of ferroelectric on SiO

KW - MFIS structure

KW - Oxygen radical treatment

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