MFIS structure device with a low dielectric constant ferroelectric Sr 2(Ta1-x,Nbx)2O7 formed by plasma physical vapor deposition and oxygen radical treatment

Ichirou Takahashi, Hiroyuki Sakurai, Tatsufumi Isogai, Kiyoshi Funaiwa, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A low dielectric constant ferroelectric Sr2(Ta 1-x,Nbx)2O7 film formation technology which is applied to FFRAM has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and microwave-excited (2.45 GHz) high-density (> 1012 cm-3) low electron temperature (< 1 eV) Kr/O2 plasma (oxygen radical treatment). Oxygen radical treatment can oxidize STN effectively at 400°C. Furthermore, we have successfully developed a new technology that crystallizes a ferroelectric material on an insulator layer such as SiO 2 and Si3N4 directly by oxygen radical treatment. Using this technology, MFIS device operation has been successfully achieved and its retention time is more than 24 hours.

Original languageEnglish
Pages (from-to)29-38
Number of pages10
JournalIntegrated Ferroelectrics
Volume65
DOIs
Publication statusPublished - 2004

Keywords

  • Crystallization of ferroelectric on SiO
  • MFIS structure
  • Oxygen radical treatment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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