TY - JOUR
T1 - Methodology of Thermoelectric Power Factor Enhancement by Controlling Nanowire Interface
AU - Ishibe, Takafumi
AU - Tomeda, Atsuki
AU - Watanabe, Kentaro
AU - Kamakura, Yoshinari
AU - Mori, Nobuya
AU - Naruse, Nobuyasu
AU - Mera, Yutaka
AU - Yamashita, Yuichiro
AU - Nakamura, Yoshiaki
N1 - Funding Information:
This work was supported in part by the JST CREST program. A part of this work was also supported by a Grant-in-Aid for Scientific Research A (Grant No. 16H02078), a Grant-in-Aid for Exploratory Research (Grant No. 15 K13276), and the JSPS Research fellow (17J00328). A part of PLD in this work was supported by “Nanotechnology Platform Project (Nano- technology Open Facilities in Osaka University)” of Ministry of Education, Culture, Sports, Science and Technology, Japan (No. S-17-OS-0025).
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/10/31
Y1 - 2018/10/31
N2 - The simultaneous realization of low thermal conductivity and high thermoelectric power factor in materials has long been the goal for the social use of high-performance thermoelectric modules. Nanostructuring approaches have drawn considerable attention because of the success in reducing thermal conductivity. On the contrary, enhancement of the thermoelectric power factor, namely, the simultaneous increase of the Seebeck coefficient and electrical conductivity, has been difficult. We propose a method for the power factor enhancement by introducing coherent homoepitaxial interfaces with controlled dopant concentration, which enables the quasiballistic transmission of high-energy carriers. The wavenumber of the high-energy carriers is nearly conserved through the interfaces, resulting in simultaneous realization of a high Seebeck coefficient and relatively high electrical mobility. Here, we experimentally demonstrate the dopant-controlled epitaxial interface effect for the thermoelectric power factor enhancement using our "embedded-ZnO nanowire structure" having high-quality nanowire interfaces. This presents the methodology for substantial power factor enhancement by interface carrier scattering.
AB - The simultaneous realization of low thermal conductivity and high thermoelectric power factor in materials has long been the goal for the social use of high-performance thermoelectric modules. Nanostructuring approaches have drawn considerable attention because of the success in reducing thermal conductivity. On the contrary, enhancement of the thermoelectric power factor, namely, the simultaneous increase of the Seebeck coefficient and electrical conductivity, has been difficult. We propose a method for the power factor enhancement by introducing coherent homoepitaxial interfaces with controlled dopant concentration, which enables the quasiballistic transmission of high-energy carriers. The wavenumber of the high-energy carriers is nearly conserved through the interfaces, resulting in simultaneous realization of a high Seebeck coefficient and relatively high electrical mobility. Here, we experimentally demonstrate the dopant-controlled epitaxial interface effect for the thermoelectric power factor enhancement using our "embedded-ZnO nanowire structure" having high-quality nanowire interfaces. This presents the methodology for substantial power factor enhancement by interface carrier scattering.
KW - ZnO
KW - carrier transport
KW - nanowire
KW - phonon
KW - thermoelectric material
KW - thermoelectric power factor
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U2 - 10.1021/acsami.8b13528
DO - 10.1021/acsami.8b13528
M3 - Article
C2 - 30346133
AN - SCOPUS:85055630323
VL - 10
SP - 37709
EP - 37716
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 43
ER -