We propose a new photoresist (MSNR: methacrylated silicone-based negative resist) for high resolution bilayer resist systems. This photoresist shows high sensitivity to near-UV light (350-450 nm), D**0**. **5//n equals 40 mJ/cm**2, and excellent resistance to reactive ion etching with oxygen. A submicron (0. 5 mu m) pattern with a high aspect ratio can be easily fabricated with MSNR/AZ bilayer resist systems using near-UV lithography.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 1986 Jan|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering