METHACRYLATED SILICONE-BASED NEGATIVE PHOTORESIST FOR HIGH RESOLUTION BILAYER RESIST SYSTEMS.

Masao Morita, Akinobu Tanaka, Katsuhide Onose

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

We propose a new photoresist (MSNR: methacrylated silicone-based negative resist) for high resolution bilayer resist systems. This photoresist shows high sensitivity to near-UV light (350-450 nm), D**0**. **5//n equals 40 mJ/cm**2, and excellent resistance to reactive ion etching with oxygen. A submicron (0. 5 mu m) pattern with a high aspect ratio can be easily fabricated with MSNR/AZ bilayer resist systems using near-UV lithography.

Original languageEnglish
Pages (from-to)414-417
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume4
Issue number1
DOIs
Publication statusPublished - 1986 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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