TY - JOUR
T1 - METHACRYLATED SILICONE-BASED NEGATIVE PHOTORESIST FOR HIGH RESOLUTION BILAYER RESIST SYSTEMS.
AU - Morita, Masao
AU - Tanaka, Akinobu
AU - Onose, Katsuhide
N1 - Copyright:
Copyright 2004 Elsevier B.V., All rights reserved.
PY - 1986/1
Y1 - 1986/1
N2 - We propose a new photoresist (MSNR: methacrylated silicone-based negative resist) for high resolution bilayer resist systems. This photoresist shows high sensitivity to near-UV light (350-450 nm), D**0**. **5//n equals 40 mJ/cm**2, and excellent resistance to reactive ion etching with oxygen. A submicron (0. 5 mu m) pattern with a high aspect ratio can be easily fabricated with MSNR/AZ bilayer resist systems using near-UV lithography.
AB - We propose a new photoresist (MSNR: methacrylated silicone-based negative resist) for high resolution bilayer resist systems. This photoresist shows high sensitivity to near-UV light (350-450 nm), D**0**. **5//n equals 40 mJ/cm**2, and excellent resistance to reactive ion etching with oxygen. A submicron (0. 5 mu m) pattern with a high aspect ratio can be easily fabricated with MSNR/AZ bilayer resist systems using near-UV lithography.
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U2 - 10.1116/1.583345
DO - 10.1116/1.583345
M3 - Article
AN - SCOPUS:0022594895
VL - 4
SP - 414
EP - 417
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 1
ER -