Metastable surface layer of a silicon nitride thin film growing by photo-chemical vapor deposition

Toshimasa Wadayama, Wataru Suëtaka

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Polarization modulation IR spectroscopy has been applied for in situ observation of the growth process of silicon nitride films under photo-chemical vapor deposition conditions. Two absorption bands ascribable to SiN stretching modes were observed. In the initial stage of the film deposition, a band appeared at 965 cm-1, whose intensity was nearly constant during the deposition. As the film was further deposited, a new band emerged around 1030 cm-1 which grew rapidly. Upon UV irradiation in vacuum, the former band decreased in intensity while the latter increased. From these results, the presence of a metastable surface layer, which changes into a stable silicon nitride network upon UV irradiation, is proposed.

Original languageEnglish
Pages (from-to)L490-L496
JournalSurface Science
Volume218
Issue number2-3
DOIs
Publication statusPublished - 1989 Aug 2

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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