Metalorganic vapor phase epitaxy of Cu(AlxGa 1-x)(SySe1-y)2 chalcopyrite semiconductors and their band offsets

Shige Fusa Chichibu, Yoshiyuki Harada, Mutsumi Sugiyama, Hisayuki Nakanishi

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


Cu-chalcopyrite (Ch) Cu(Al,Ga,In)(S,Se)2 compounds and alloys were grown epitaxialy on various substrates by low-pressure metalorganic vapor phase epitaxy. They grew in such a manner that the lattice mismatch between the epilayer and the substrate became minimum. Growth of anion and cation alloys revealed that the vapor pressure of Al-S reactants is much higher than that of Ga-S or Al-Se ones. Most of residual strain in the epilayer was assigned as being due to the pseudomorphic stress for those having small lattice mismatch (<1%) against the substrate and to the thermal stress for large lattice mismatch (>1%) ones, and the strain problem was solved by the use of Ch structure substrate. All single-domain compound epilayers, namely CuAlS 2, CuAlSe2, CuGaS2, CuGaSe2, CuInSe2, and their alloys exhibited predominant excitonic photoluminescence peaks. A noticeable excitonic feature was found in the PL spectra of CuAlS2, CuGaS2 and CuGaSe2 even at 300 K. Band diagram of Cu(Al,Ga)(S,Se)2 system was discussed, and they are considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.

Original languageEnglish
Pages (from-to)1481-1489
Number of pages9
JournalJournal of Physics and Chemistry of Solids
Issue number9-10
Publication statusPublished - 2003 Sep
Externally publishedYes


  • A. Semiconductors
  • B. Epitaxial growth
  • C. Photoelectron spectroscopy
  • D. Electronic structure
  • D. Optical properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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