TY - JOUR
T1 - Metalorganic vapor phase epitaxy of Cu(AlxGa 1-x)(SySe1-y)2 chalcopyrite semiconductors and their band offsets
AU - Chichibu, Shige Fusa
AU - Harada, Yoshiyuki
AU - Sugiyama, Mutsumi
AU - Nakanishi, Hisayuki
N1 - Funding Information:
The authors would like to thank the Benkan Corporation and Trichemical Laboratory for the support of the research. One of the authors (SF.C.) thank Prof. S. Shirakata for stimulating discussions and PR measurements. We wish to thank Y. Takaoka and T. Mitani of Keio University for several analyses. Experimental assistance of students at Keio University and Science University of Tokyo is greatly acknowledged. Continuous encouragement of Prof. K. Sato, Prof. T. Irie, Prof. S. Matsumoto, K. Sawa, Prof. T. Sota and Prof. F. Hasegawa is gratefully acknowledged. This work was supported in part by the 21st Century COE program ‘Promotion of Creative Interdisciplinary Materials Science for Novel Functions’ under Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2003/9
Y1 - 2003/9
N2 - Cu-chalcopyrite (Ch) Cu(Al,Ga,In)(S,Se)2 compounds and alloys were grown epitaxialy on various substrates by low-pressure metalorganic vapor phase epitaxy. They grew in such a manner that the lattice mismatch between the epilayer and the substrate became minimum. Growth of anion and cation alloys revealed that the vapor pressure of Al-S reactants is much higher than that of Ga-S or Al-Se ones. Most of residual strain in the epilayer was assigned as being due to the pseudomorphic stress for those having small lattice mismatch (<1%) against the substrate and to the thermal stress for large lattice mismatch (>1%) ones, and the strain problem was solved by the use of Ch structure substrate. All single-domain compound epilayers, namely CuAlS 2, CuAlSe2, CuGaS2, CuGaSe2, CuInSe2, and their alloys exhibited predominant excitonic photoluminescence peaks. A noticeable excitonic feature was found in the PL spectra of CuAlS2, CuGaS2 and CuGaSe2 even at 300 K. Band diagram of Cu(Al,Ga)(S,Se)2 system was discussed, and they are considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.
AB - Cu-chalcopyrite (Ch) Cu(Al,Ga,In)(S,Se)2 compounds and alloys were grown epitaxialy on various substrates by low-pressure metalorganic vapor phase epitaxy. They grew in such a manner that the lattice mismatch between the epilayer and the substrate became minimum. Growth of anion and cation alloys revealed that the vapor pressure of Al-S reactants is much higher than that of Ga-S or Al-Se ones. Most of residual strain in the epilayer was assigned as being due to the pseudomorphic stress for those having small lattice mismatch (<1%) against the substrate and to the thermal stress for large lattice mismatch (>1%) ones, and the strain problem was solved by the use of Ch structure substrate. All single-domain compound epilayers, namely CuAlS 2, CuAlSe2, CuGaS2, CuGaSe2, CuInSe2, and their alloys exhibited predominant excitonic photoluminescence peaks. A noticeable excitonic feature was found in the PL spectra of CuAlS2, CuGaS2 and CuGaSe2 even at 300 K. Band diagram of Cu(Al,Ga)(S,Se)2 system was discussed, and they are considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.
KW - A. Semiconductors
KW - B. Epitaxial growth
KW - C. Photoelectron spectroscopy
KW - D. Electronic structure
KW - D. Optical properties
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U2 - 10.1016/S0022-3697(03)00125-2
DO - 10.1016/S0022-3697(03)00125-2
M3 - Article
AN - SCOPUS:0043239286
VL - 64
SP - 1481
EP - 1489
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 9-10
ER -