Metalorganic Chemical Vapor Deposition of HfO2 Films through the Alternating Supply of Tetrakis(1-methoxy-2-methyl-2-propoxy)-Hafnium and Remote-Plasma Oxygen

Sadayoshi Horii, Kazuhiko Yamamoto, Masayuki Asai, Hironobu Miya, Masaaki Niwa

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Thin films of hafnium oxide were deposited by sequence in which the supply of tetrakis (1-methoxy-2-methyl-2-propoxy)-hafnium and remote-plasma oxygen were alternated. Increasing the number of cycles of alternating supply led to decreased amounts of hydrocarbon impurities in the film and the realization of an amorphous characteristic for the as-deposited films. HfO2 dielectric capacitors produced by using this alternating supply technique exhibit values for leakage current that are two orders of magnitude lower than those of capacitors produced using the conventional process of metalorganic chemical vapor deposition. This effective improvement can be explained by the reduced presence of impurities, particularly H2O.

Original languageEnglish
Pages (from-to)5176-5180
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number8
Publication statusPublished - 2003 Aug 1
Externally publishedYes

Keywords

  • Dielectric film
  • Hafnium oxide
  • MOCVD
  • Remote-plasma oxygen

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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