Metallurgical and electrical characterization of ultrathin CoTix liner/barrier for Cu interconnects

Maryamsadat Hosseini; Junichi Koike

doi:10.1109/IITC-AMC.2017.7968959

Metallurgical and electrical characterization of ultrathin CoTi_x liner/barrier for Cu interconnects

Maryamsadat Hosseini, Junichi Koike

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

This paper reports an amorphous CoTi_x alloy as a single-layer liner/barrier material for intermediate interconnects in place of bilayer Ta/TaN materials. The CoTix layer was found to enhance adhesion of Cu/SiO₂. The CoTi_x layer stayed amorphous after annealing at 400°C, and started to crystallize at 500°C. Capacitance-voltage measurement of the samples showed no interdiffusion of Cu ions into SiO₂ after annealing up to 600°C and after bias thermal stress at 250°C at 3 MV/cm. All the obtained results showed that the amorphous CoTi_x alloy is a promising material for a liner/barrier layer in advanced technology node.

Original language	English
Title of host publication	IITC 2017 - 2017 IEEE International Interconnect Technology Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509064731
DOIs	https://doi.org/10.1109/IITC-AMC.2017.7968959
Publication status	Published - 2017 Jul 5
Event	2017 IEEE International Interconnect Technology Conference, IITC 2017 - Hsinchu, Taiwan, Province of China Duration: 2017 May 16 → 2017 May 18

Publication series

Name	IITC 2017 - 2017 IEEE International Interconnect Technology Conference

Other

Other	2017 IEEE International Interconnect Technology Conference, IITC 2017
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	17/5/16 → 17/5/18

Keywords

Co alloy
LSI
diffusion barrier
interconnect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Metals and Alloys
Electrical and Electronic Engineering

Access to Document

10.1109/IITC-AMC.2017.7968959

Cite this

Hosseini, M., & Koike, J. (2017). Metallurgical and electrical characterization of ultrathin CoTi_x liner/barrier for Cu interconnects. In IITC 2017 - 2017 IEEE International Interconnect Technology Conference [7968959] (IITC 2017 - 2017 IEEE International Interconnect Technology Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC-AMC.2017.7968959

Metallurgical and electrical characterization of ultrathin CoTi_x liner/barrier for Cu interconnects. / Hosseini, Maryamsadat; Koike, Junichi.

IITC 2017 - 2017 IEEE International Interconnect Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2017. 7968959 (IITC 2017 - 2017 IEEE International Interconnect Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hosseini, M & Koike, J 2017, Metallurgical and electrical characterization of ultrathin CoTi_x liner/barrier for Cu interconnects. in IITC 2017 - 2017 IEEE International Interconnect Technology Conference., 7968959, IITC 2017 - 2017 IEEE International Interconnect Technology Conference, Institute of Electrical and Electronics Engineers Inc., 2017 IEEE International Interconnect Technology Conference, IITC 2017, Hsinchu, Taiwan, Province of China, 17/5/16. https://doi.org/10.1109/IITC-AMC.2017.7968959

Hosseini M, Koike J. Metallurgical and electrical characterization of ultrathin CoTi_x liner/barrier for Cu interconnects. In IITC 2017 - 2017 IEEE International Interconnect Technology Conference. Institute of Electrical and Electronics Engineers Inc. 2017. 7968959. (IITC 2017 - 2017 IEEE International Interconnect Technology Conference). https://doi.org/10.1109/IITC-AMC.2017.7968959

@inproceedings{d51938ad0b4d4289a01a5d58f5b0dbe0,

title = "Metallurgical and electrical characterization of ultrathin CoTix liner/barrier for Cu interconnects",

abstract = "This paper reports an amorphous CoTix alloy as a single-layer liner/barrier material for intermediate interconnects in place of bilayer Ta/TaN materials. The CoTix layer was found to enhance adhesion of Cu/SiO2. The CoTix layer stayed amorphous after annealing at 400°C, and started to crystallize at 500°C. Capacitance-voltage measurement of the samples showed no interdiffusion of Cu ions into SiO2 after annealing up to 600°C and after bias thermal stress at 250°C at 3 MV/cm. All the obtained results showed that the amorphous CoTix alloy is a promising material for a liner/barrier layer in advanced technology node.",

keywords = "Co alloy, LSI, diffusion barrier, interconnect",

author = "Maryamsadat Hosseini and Junichi Koike",

year = "2017",

month = jul,

day = "5",

doi = "10.1109/IITC-AMC.2017.7968959",

language = "English",

series = "IITC 2017 - 2017 IEEE International Interconnect Technology Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IITC 2017 - 2017 IEEE International Interconnect Technology Conference",

note = "2017 IEEE International Interconnect Technology Conference, IITC 2017 ; Conference date: 16-05-2017 Through 18-05-2017",

}

TY - GEN

T1 - Metallurgical and electrical characterization of ultrathin CoTix liner/barrier for Cu interconnects

AU - Hosseini, Maryamsadat

AU - Koike, Junichi

PY - 2017/7/5

Y1 - 2017/7/5

N2 - This paper reports an amorphous CoTix alloy as a single-layer liner/barrier material for intermediate interconnects in place of bilayer Ta/TaN materials. The CoTix layer was found to enhance adhesion of Cu/SiO2. The CoTix layer stayed amorphous after annealing at 400°C, and started to crystallize at 500°C. Capacitance-voltage measurement of the samples showed no interdiffusion of Cu ions into SiO2 after annealing up to 600°C and after bias thermal stress at 250°C at 3 MV/cm. All the obtained results showed that the amorphous CoTix alloy is a promising material for a liner/barrier layer in advanced technology node.

AB - This paper reports an amorphous CoTix alloy as a single-layer liner/barrier material for intermediate interconnects in place of bilayer Ta/TaN materials. The CoTix layer was found to enhance adhesion of Cu/SiO2. The CoTix layer stayed amorphous after annealing at 400°C, and started to crystallize at 500°C. Capacitance-voltage measurement of the samples showed no interdiffusion of Cu ions into SiO2 after annealing up to 600°C and after bias thermal stress at 250°C at 3 MV/cm. All the obtained results showed that the amorphous CoTix alloy is a promising material for a liner/barrier layer in advanced technology node.

KW - Co alloy

KW - LSI

KW - diffusion barrier

KW - interconnect

UR - http://www.scopus.com/inward/record.url?scp=85027143615&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027143615&partnerID=8YFLogxK

U2 - 10.1109/IITC-AMC.2017.7968959

DO - 10.1109/IITC-AMC.2017.7968959

M3 - Conference contribution

AN - SCOPUS:85027143615

T3 - IITC 2017 - 2017 IEEE International Interconnect Technology Conference

BT - IITC 2017 - 2017 IEEE International Interconnect Technology Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 IEEE International Interconnect Technology Conference, IITC 2017

Y2 - 16 May 2017 through 18 May 2017

ER -