TY - JOUR
T1 - Metallic transport in a monatomic layer of in on a silicon surface
AU - Yamazaki, Shiro
AU - Hosomura, Yoshikazu
AU - Matsuda, Iwao
AU - Hobara, Rei
AU - Eguchi, Toyoaki
AU - Hasegawa, Yukio
AU - Hasegawa, Shuji
PY - 2011/3/14
Y1 - 2011/3/14
N2 - We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-√7×√3-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the metallic temperature dependence of resistivity down to 10 K. This is the first example of a monatomic layer, with the exception of graphene, showing metallic transport without carrier localization at cryogenic temperatures. By introducing defects on this surface, a metal-insulator transition occurred due to Anderson localization, showing hopping conduction.
AB - We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-√7×√3-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the metallic temperature dependence of resistivity down to 10 K. This is the first example of a monatomic layer, with the exception of graphene, showing metallic transport without carrier localization at cryogenic temperatures. By introducing defects on this surface, a metal-insulator transition occurred due to Anderson localization, showing hopping conduction.
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U2 - 10.1103/PhysRevLett.106.116802
DO - 10.1103/PhysRevLett.106.116802
M3 - Article
AN - SCOPUS:79952594679
VL - 106
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 11
M1 - 116802
ER -