Metallic transport in a monatomic layer of in on a silicon surface

Shiro Yamazaki, Yoshikazu Hosomura, Iwao Matsuda, Rei Hobara, Toyoaki Eguchi, Yukio Hasegawa, Shuji Hasegawa

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-√7×√3-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the metallic temperature dependence of resistivity down to 10 K. This is the first example of a monatomic layer, with the exception of graphene, showing metallic transport without carrier localization at cryogenic temperatures. By introducing defects on this surface, a metal-insulator transition occurred due to Anderson localization, showing hopping conduction.

Original languageEnglish
Article number116802
JournalPhysical review letters
Issue number11
Publication statusPublished - 2011 Mar 14
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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