TY - JOUR
T1 - Metallic conduction and carrier localization in two-dimensional BEDO-TTF charge-transfer solid crystals
AU - Ito, Hiroshi
AU - Matsuno, Motoki
AU - Katagiri, Seiu
AU - Yoshina, Shinji K.
AU - Takenobu, Taishi
AU - Ishikawa, Manabu
AU - Otsuka, Akihiro
AU - Yamochi, Hideki
AU - Yoshida, Yukihiro
AU - Saito, Gunzi
AU - Shen, Yongbing
AU - Yamashita, Masahiro
N1 - Funding Information:
This research was funded by JSPS KAKENHI (grant nos. 19K22127, 20H05867, 20H05664, 20H05862, 20K05448 and 21K04865) and JST CREST (grant no. JPMJCR17I5). M.Y. acknowledges the support by the 111 project (B18030) from China.
Funding Information:
A typical fitting result for the magnetoconductance of κ-BO2 #1 along the weak 2D localization model under the perpendicular magnetic field. Figure S5: A typical fitting result for the magnetoconductance Supplementary Materials: The following are available online at www.mdpi.com/xxx/s1, Figure S1: A typical fitting result for the magnetoconductance of β”-BO3 #1 along the weak 2D localization model under the perpendicular magnetic field. Figure S2: A typical fitting result for the magneto-conductance of β”-BO3 #2 along the weak 2D localization model under the perpendicular magnetic Parameters obtained by the fitting shown in Figure S4. Table S5: Parameters obtained by the fitting field. Figure S3: A typical fitting result for the magnetoconductance of β”-BO3 #3 along the weak 2D shown in Figure S5. localization model under the perpendicular magnetic field. Figure S4: A typical fitting result for the magnAetuotchoonrdCuocntatnricbeu otifoκn-sB:OB2O #m1 oalleocnugl ethsyen wtheeaskis 2, DM .lIo.,cAal.iOza. tainond Hm.oYd.;eβl′ú-nBdOe3r ctrhyes tpaelsrppernepdaicruatliaorn , Y.S. magnaentidc fMie.lYd..;Fκi-gBuOr2e Scr5y: s tatlysppicraepl fairttaitniognr,esYu.Ylt. faonrd thGe. Sm.;amgneeatsoucroenmdeuncttsanacned oafnκa-BlyOsi2s ,#H3 a.Il.o,nMg. tMhe., S.K., weakS 2.KD. Ylo.caanlidzaTti.To.n; mmoanduelsucrnipdterp trheep apreartpioennd, iHcu.Il.aAr mll aagunthetoircs fihealdv.e Traebalde Sa1n:dPaargarmeeedtetros tohbetapinuebdlished by thve efritstiionngosfhtohwenmiann Fuisgcurirpet S. 1. Table S2: Parameters obtained by the fitting shown in Figure S2. Table S3: Parameters obtained by the fitting shown in Figure S3. Table S4: Parameters obtained by Funding: This research was funded by JSPS KAKENHI (grant nos. 19K22127, 20H05867, 20H05664, the fitting shown in Figure S4. Table S5: Parameters obtained by the fitting shown in Figure S5.
Funding Information:
20H05862, 20K05448 and 21K04865) and JST CREST (grant no. JPMJCR17I5). M.Y. acknowledges the Authsour pCpoonrttrbibyuthtieon11s1: BpOrojmecotl(eBc1u8l0e3s0y)nftrhoemsiCs,hMin.aI.., A.O. and H.Y.; β”-BO3 crystals preparation, Y.S. and M.Y.; κ-BO2 crystals preparation, Y.Y. and G.S.; measurements and analysis, H.I., M.M.,
Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2022/1
Y1 - 2022/1
N2 - Charge-transfer salts based on bis(ethylenedioxy)tetrathiafulvalene (BEDO-TTF or BO for short) provide a stable two-dimensional (2D) metallic state, while the electrical resistance often shows an upturn at low temperatures below ~10 K. Such 2D weak carrier localization was first recognized for BO salts in the Langmuir–Blodgett films fabricated with fatty acids; however, it has not been characterized in charge-transfer solid crystals. In this paper, we discuss the carrier localization of two crystalline BO charge-transfer salts with or without magnetic ions at low temperatures through the analysis of the weak negative magnetoresistance. The phase coherence lengths deduced with temperature dependence are largely dominated by the electron–electron scattering mechanism. These results indicate that the resistivity upturn at low temperatures is caused by the 2D weak localization. Disorders causing elastic scattering within the metallic domains, such as those of terminal ethylene groups, should be suppressed to prevent the localization.
AB - Charge-transfer salts based on bis(ethylenedioxy)tetrathiafulvalene (BEDO-TTF or BO for short) provide a stable two-dimensional (2D) metallic state, while the electrical resistance often shows an upturn at low temperatures below ~10 K. Such 2D weak carrier localization was first recognized for BO salts in the Langmuir–Blodgett films fabricated with fatty acids; however, it has not been characterized in charge-transfer solid crystals. In this paper, we discuss the carrier localization of two crystalline BO charge-transfer salts with or without magnetic ions at low temperatures through the analysis of the weak negative magnetoresistance. The phase coherence lengths deduced with temperature dependence are largely dominated by the electron–electron scattering mechanism. These results indicate that the resistivity upturn at low temperatures is caused by the 2D weak localization. Disorders causing elastic scattering within the metallic domains, such as those of terminal ethylene groups, should be suppressed to prevent the localization.
KW - Carrier localization
KW - Charge-transfer solid crystals
KW - Negative magnetoresistance
KW - Phase coherence length
KW - Two-dimensional metal
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U2 - 10.3390/cryst12010023
DO - 10.3390/cryst12010023
M3 - Article
AN - SCOPUS:85121692330
SN - 2073-4352
VL - 12
JO - Crystals
JF - Crystals
IS - 1
M1 - 23
ER -