Metallic behavior in low-disorder two-dimensional hole systems in the presence of long- and short-range disorder

W. R. Clarke, C. E. Yasin, A. R. Hamilton, A. P. Micolich, M. Y. Simmons, K. Muraki, Yoshiro Hirayama, M. Pepper, D. A. Ritchie

Research output: Contribution to journalArticlepeer-review

Abstract

We compare directly the metallic behavior of high-quality, two-dimensional hole systems (2DHSs) in two GaAs device structures-one dominated by short-range disorder and the other by long-range disorder. We find that the type of disorder strongly affects the metallic behavior of the 2DHSs. In particular, we find that metallic behavior is enhanced in 2D systems with a high proportion of large-angle scattering events.

Original languageEnglish
Pages (from-to)1599-1601
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
DOIs
Publication statusPublished - 2008 Mar 1

Keywords

  • 2D hole systems
  • Disorder
  • Metal-Insulator transition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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