Metal-to-insulator transition in Ruddlesden-Popper-type Srn+1VnO3n+1 (n = 1, 2) epitaxial thin films as a function of strain and VO2 stacking layer number

Shintaro Fukuda, Daichi Oka, Tomoteru Fukumura

Research output: Contribution to journalArticlepeer-review

Abstract

A series of Ruddlesden-Popper-type Srn+1VnO3n+1 (n = 1, 2) (001) epitaxial thin films was grown on LaAlO3 and LaSrGaO4 substrates with tensile and compressive epitaxial strains, respectively. The decrease in VO2 stacking layer number n and the increase in the interlayer distance between the (VO2)n layers resulted in metal-to-insulator transition. The sheet conductance of a single (VO2)n layer in Srn+1VnO3n+1 (n = 1, 2) was close to the well-known Ioffe-Regel limit, which suggests their two-dimensional electrical conduction. From resistivity and magnetoconductance measurements, it is found that renormalized electron-electron interaction and/or the Kondo effect were enhanced with the decrease in n, and possible quantum interference effects like weak localization were induced with the increase in the interlayer distance.

Original languageEnglish
Article number123101
JournalApplied Physics Letters
Volume116
Issue number12
DOIs
Publication statusPublished - 2020 Mar 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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