Metal reaction doping and ohmic contact with Cu-Mn electrode on amorphous In-Ga-Zn-O semiconductor

P. S. Yun, J. Koike

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

We investigated the microstructure and electrical properties of Cu and Cu-Mn alloy on amorphous In-Ga-Zn-O (a-IGZO) oxide semiconductor in order to explore a high performance electrode material for thin film transistors (TFTs) in advanced flat panel displays. Current-voltage measurements of metal/semiconductor contact structure showed a non-linear behavior with Cu, while a good ohmic behavior [C (1.2-2.9) 10-4 cm 2] with the Cu-Mn alloy after annealing at 250C for 1 h. Transfer and output characteristics of TFT structure also showed excellent performance with the Cu-Mn alloy. The good electrical property was due to the formation of a highly doped n a-IGZO layer with the carrier density of 1.4 1020 cm-3. The donor doping could be achieved simply by heat treatment to promote the oxidation of Mn and the reduction of a-IGZO.

Original languageEnglish
Pages (from-to)H1034-H1040
JournalJournal of the Electrochemical Society
Volume158
Issue number10
DOIs
Publication statusPublished - 2011 Aug 31

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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