Metal organic atomic layer deposition of metal silicate film for high-k gate dielectrics

Kazuhiko Endo, Toru Tatsumi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We investigated the use of atomic layer deposition to fabricate metal silicate film for high-k gate dielectrics. We used a metal organic precursor and alternate exposures of Ar plasma to achieve ion-assisted mixing of metal atoms into the substrate during each ALD cycle. The concentration of metal atoms was varied by changing the length of the cycles. The electrical characteristics of the silicate film were better than those of film fabricated using O2 plasma or H2O irradiation.

Original languageEnglish
Pages (from-to)L1296-L1298
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number10 A
DOIs
Publication statusPublished - 2004 Oct 1
Externally publishedYes

Keywords

  • Atomic layer deposition
  • High-k dielectric
  • Plasma mixing
  • Silicate
  • Zirconium

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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