Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation

Kazuhiko Endo, Toru Tatsumi

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

We have investigated an atomic layer deposition (ALD) of ZrO2 or HfO2 by using a metal-organic (MO) precursor. As MO precursors are very sensitive to H2O and have much carbon content, we used oxygen plasma instead of H2O in order to suppress the background reaction with H2O and reduce carbon contamination. As a result, we achieved an ALD proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H2O oxidation.

Original languageEnglish
Pages (from-to)L685-L687
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number6 B
Publication statusPublished - 2003 Jun 15
Externally publishedYes

Keywords

  • Atomic layer deposition
  • HfO
  • High dielectric constant
  • Plasma oxidation
  • ZrO

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation'. Together they form a unique fingerprint.

Cite this