Abstract
New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory, is proposed for a future high density non-volatile memory application [1], Fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using sputtering technique with a special sputtering target. The diameter and the density of the MND in the film are typically 2-3nm and around 2×10 13/cm 2, respectively, which were superior to that of Si nano-dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.
| Original language | English |
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| Pages | 885-889 |
| Number of pages | 5 |
| Publication status | Published - 2004 Dec 1 |
| Event | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 2004 Oct 18 → 2004 Oct 21 |
Other
| Other | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 |
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| Country/Territory | China |
| City | Beijing |
| Period | 04/10/18 → 04/10/21 |
ASJC Scopus subject areas
- Engineering(all)