Metal nano-dot memory for high-density non-volatile memory application

Mitsumasa Koyanagi, Masaaki Takata, Hiroyuki Kurino

Research output: Contribution to conferencePaperpeer-review

Abstract

New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory, is proposed for a future high density non-volatile memory application [1], Fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using sputtering technique with a special sputtering target. The diameter and the density of the MND in the film are typically 2-3nm and around 2×10 13/cm 2, respectively, which were superior to that of Si nano-dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.

Original languageEnglish
Pages885-889
Number of pages5
Publication statusPublished - 2004 Dec 1
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 2004 Oct 182004 Oct 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period04/10/1804/10/21

ASJC Scopus subject areas

  • Engineering(all)

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