TY - JOUR
T1 - Metal induced gap states at alkali halide/metal interface
AU - Kiguchi, Manabu
AU - Yoshikawa, Genki
AU - Ikeda, Susumu
AU - Saiki, Koichiro
N1 - Funding Information:
The present work was performed under the approval of Photon Factory Program Advisory Committee (PF-PAC No.2001G336). This work was supported by the Grant-in-Aid from the Ministry of Education, Culture, Sports, Science and Technology of Japan (14GS0207).
PY - 2004/10/15
Y1 - 2004/10/15
N2 - The electronic state of a KCl/Cu(0 0 1) interface was investigated using the Cl K-edgc near-edge X-ray absorption fine structure (NEXAPS). A pre-peak observed on the bulk edge onset of thin KC1 films has a similar feature to the peak at a LiCl/ Cu(0 0 1) interface, which originates from the metal induced gap state (MIGS). The present result indicates that the MIGS is formed universally at alkali halide/metal interfaces. The decay length of MIGS to an insulator differs from each other, mainly due to the difference in the band gap energy of alkali halide.
AB - The electronic state of a KCl/Cu(0 0 1) interface was investigated using the Cl K-edgc near-edge X-ray absorption fine structure (NEXAPS). A pre-peak observed on the bulk edge onset of thin KC1 films has a similar feature to the peak at a LiCl/ Cu(0 0 1) interface, which originates from the metal induced gap state (MIGS). The present result indicates that the MIGS is formed universally at alkali halide/metal interfaces. The decay length of MIGS to an insulator differs from each other, mainly due to the difference in the band gap energy of alkali halide.
KW - Alkali halides
KW - Metal-insulator interfaces
KW - Near-edge extended X-ray absorption fine structure
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U2 - 10.1016/j.apsusc.2004.06.127
DO - 10.1016/j.apsusc.2004.06.127
M3 - Article
AN - SCOPUS:4644262571
VL - 237
SP - 495
EP - 498
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
ER -