Metal-gate FinFET variation analysis by measurement and compact model

Shin Ichi O'uchi, Takashi Matsukawa, Tadashi Nakagawa, Kazuhiko Endo, Yongxun Liu, Toshihiro Sekigawa, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Kenichi Ishii, Eiichi Suzuki, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A compact model (CM) for Fin-type FETs (FinFETs) was successfully developed and applied to variability analysis of a fabricated state-of-the-art metal-gate (MG) FinFET. By combining the statistical measurements with the CM calibration, Vth variation was, for the first time, broken down into structure-based (silicon fin thickness and gate length) and material-based (gate work function) components. As a result, the measured variation of MG FinFET performance was successfully reproduced by the CM. Characterization using the CM with the measured statistical data provides insight on the gate work function variation of 16 meV in short-channel molybdenum (Mo) gate FinFETs.

Original languageEnglish
Pages (from-to)556-558
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
Publication statusPublished - 2009
Externally publishedYes


  • Calibration
  • Compact model (CM)
  • FinFET
  • Gate work function
  • Metal gate (MG)
  • Variation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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