Metal-gate FinFET variation analysis by measurement and compact model

Shin Ichi O'uchi; Takashi Matsukawa; Tadashi Nakagawa; Kazuhiko Endo; Yongxun Liu; Toshihiro Sekigawa; Junichi Tsukada; Yuki Ishikawa; Hiromi Yamauchi; Kenichi Ishii; Eiichi Suzuki; Hanpei Koike; Kunihiro Sakamoto; Meishoku Masahara

doi:10.1109/LED.2009.2016769

Metal-gate FinFET variation analysis by measurement and compact model

Shin Ichi O'uchi, Takashi Matsukawa, Tadashi Nakagawa, Kazuhiko Endo, Yongxun Liu, Toshihiro Sekigawa, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Kenichi Ishii, Eiichi Suzuki, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A compact model (CM) for Fin-type FETs (FinFETs) was successfully developed and applied to variability analysis of a fabricated state-of-the-art metal-gate (MG) FinFET. By combining the statistical measurements with the CM calibration, Vth variation was, for the first time, broken down into structure-based (silicon fin thickness and gate length) and material-based (gate work function) components. As a result, the measured variation of MG FinFET performance was successfully reproduced by the CM. Characterization using the CM with the measured statistical data provides insight on the gate work function variation of 16 meV in short-channel molybdenum (Mo) gate FinFETs.

Original language	English
Pages (from-to)	556-558
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	5
DOIs	https://doi.org/10.1109/LED.2009.2016769
Publication status	Published - 2009
Externally published	Yes

Keywords

Calibration
Compact model (CM)
FinFET
Gate work function
Metal gate (MG)
Variation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2009.2016769

Cite this

Metal-gate FinFET variation analysis by measurement and compact model. / O'uchi, Shin Ichi; Matsukawa, Takashi; Nakagawa, Tadashi; Endo, Kazuhiko; Liu, Yongxun; Sekigawa, Toshihiro; Tsukada, Junichi; Ishikawa, Yuki; Yamauchi, Hiromi; Ishii, Kenichi; Suzuki, Eiichi; Koike, Hanpei; Sakamoto, Kunihiro; Masahara, Meishoku.

In: IEEE Electron Device Letters, Vol. 30, No. 5, 2009, p. 556-558.

Research output: Contribution to journal › Article › peer-review

O'uchi, Shin Ichi ; Matsukawa, Takashi ; Nakagawa, Tadashi ; Endo, Kazuhiko ; Liu, Yongxun ; Sekigawa, Toshihiro ; Tsukada, Junichi ; Ishikawa, Yuki ; Yamauchi, Hiromi ; Ishii, Kenichi ; Suzuki, Eiichi ; Koike, Hanpei ; Sakamoto, Kunihiro ; Masahara, Meishoku. / Metal-gate FinFET variation analysis by measurement and compact model. In: IEEE Electron Device Letters. 2009 ; Vol. 30, No. 5. pp. 556-558.

@article{f6ba832ad9cb4a09a238e863a7e2f864,

title = "Metal-gate FinFET variation analysis by measurement and compact model",

abstract = "A compact model (CM) for Fin-type FETs (FinFETs) was successfully developed and applied to variability analysis of a fabricated state-of-the-art metal-gate (MG) FinFET. By combining the statistical measurements with the CM calibration, Vth variation was, for the first time, broken down into structure-based (silicon fin thickness and gate length) and material-based (gate work function) components. As a result, the measured variation of MG FinFET performance was successfully reproduced by the CM. Characterization using the CM with the measured statistical data provides insight on the gate work function variation of 16 meV in short-channel molybdenum (Mo) gate FinFETs.",

keywords = "Calibration, Compact model (CM), FinFET, Gate work function, Metal gate (MG), Variation",

author = "O'uchi, {Shin Ichi} and Takashi Matsukawa and Tadashi Nakagawa and Kazuhiko Endo and Yongxun Liu and Toshihiro Sekigawa and Junichi Tsukada and Yuki Ishikawa and Hiromi Yamauchi and Kenichi Ishii and Eiichi Suzuki and Hanpei Koike and Kunihiro Sakamoto and Meishoku Masahara",

note = "Funding Information: Manuscript received December 13, 2008; revised February 20, 2009. First published April 10, 2009; current version published April 28, 2009. This work was supported by METI{\textquoteright}s Innovation Research Project on Nanoelec-tronics Materials and Structures. The review of this letter was arranged by Editor M. Ostling.",

year = "2009",

doi = "10.1109/LED.2009.2016769",

language = "English",

volume = "30",

pages = "556--558",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Metal-gate FinFET variation analysis by measurement and compact model

AU - O'uchi, Shin Ichi

AU - Matsukawa, Takashi

AU - Nakagawa, Tadashi

AU - Endo, Kazuhiko

AU - Liu, Yongxun

AU - Sekigawa, Toshihiro

AU - Tsukada, Junichi

AU - Ishikawa, Yuki

AU - Yamauchi, Hiromi

AU - Ishii, Kenichi

AU - Suzuki, Eiichi

AU - Koike, Hanpei

AU - Sakamoto, Kunihiro

AU - Masahara, Meishoku

N1 - Funding Information: Manuscript received December 13, 2008; revised February 20, 2009. First published April 10, 2009; current version published April 28, 2009. This work was supported by METI’s Innovation Research Project on Nanoelec-tronics Materials and Structures. The review of this letter was arranged by Editor M. Ostling.

PY - 2009

Y1 - 2009

N2 - A compact model (CM) for Fin-type FETs (FinFETs) was successfully developed and applied to variability analysis of a fabricated state-of-the-art metal-gate (MG) FinFET. By combining the statistical measurements with the CM calibration, Vth variation was, for the first time, broken down into structure-based (silicon fin thickness and gate length) and material-based (gate work function) components. As a result, the measured variation of MG FinFET performance was successfully reproduced by the CM. Characterization using the CM with the measured statistical data provides insight on the gate work function variation of 16 meV in short-channel molybdenum (Mo) gate FinFETs.

AB - A compact model (CM) for Fin-type FETs (FinFETs) was successfully developed and applied to variability analysis of a fabricated state-of-the-art metal-gate (MG) FinFET. By combining the statistical measurements with the CM calibration, Vth variation was, for the first time, broken down into structure-based (silicon fin thickness and gate length) and material-based (gate work function) components. As a result, the measured variation of MG FinFET performance was successfully reproduced by the CM. Characterization using the CM with the measured statistical data provides insight on the gate work function variation of 16 meV in short-channel molybdenum (Mo) gate FinFETs.

KW - Calibration

KW - Compact model (CM)

KW - FinFET

KW - Gate work function

KW - Metal gate (MG)

KW - Variation

UR - http://www.scopus.com/inward/record.url?scp=67349161785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349161785&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2016769

DO - 10.1109/LED.2009.2016769

M3 - Article

AN - SCOPUS:67349161785

VL - 30

SP - 556

EP - 558

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 5

ER -

Metal-gate FinFET variation analysis by measurement and compact model

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this