Metal catalyst enhanced growth of high quality and density GaN dots on Si(111) by implant source growth

Ryan Buckmaster, Takenari Goto, Takashi Hanada, Katsushi Fujii, Takashi Kato, Takafumi Yao

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Using ion implantated material as a growth source, implant source growth, is an alternative growth method where ion implanted atoms diffuse to the surface and can be used to form nanostructures. By introducing a small amount of a steel based contaminate we were able to grow high quality and high density GaN nanodots on Si(111) which showed strong excitonic UV luminescence. Furthermore by varying the implanted Ga dose and annealing conditions, the size of the nanodots can be controlled. This method for producing GaN nanostructures may be useful for optical or electronic device applications.

Original languageEnglish
Pages (from-to)2314-2317
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: 2006 Oct 222006 Oct 27

ASJC Scopus subject areas

  • Condensed Matter Physics

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