TY - GEN
T1 - Metal-Assisted Chemical Etching Method Subjected to Micro/Nano Device Fabrication
AU - Toan, Nguyen Van
AU - Wang, Xiaoyue
AU - Inomata, Naoki
AU - Toda, Masaya
AU - Voiculescu, Ioana
AU - Ono, Takahito
N1 - Funding Information:
Part of this work was performed in the Micro/Nanomachining Research Education Center (MNC) of Tohoku University. This work was supported in part by JSPS KAKENHI for Young Scientists B (Grant number: 17K14095), and also supported in part by Council for Science, Technology and Innovation(CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP).
Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - This work presents the metal-assisted chemical etching (MACE) technique along with applications of this technique in micro/nano systems. In this research the MACE technique was used for the fabrication of simple and complex microelectromechanical systems (MEMS) structure such as; micro-cantilever beam and capacitive silicon resonator respectively. Micro-cantilever beam with resonant frequency of 262 kHz and quality factor of 8100 was successfully fabricated. Nano gaps with 250 nm-width and 7 μm-height together with resonator structure have been successfully produced. The resonant peak of the fabricated resonator was found at 81.4 MHz with quality factor of 4000 and motional resistance of 89 kω.
AB - This work presents the metal-assisted chemical etching (MACE) technique along with applications of this technique in micro/nano systems. In this research the MACE technique was used for the fabrication of simple and complex microelectromechanical systems (MEMS) structure such as; micro-cantilever beam and capacitive silicon resonator respectively. Micro-cantilever beam with resonant frequency of 262 kHz and quality factor of 8100 was successfully fabricated. Nano gaps with 250 nm-width and 7 μm-height together with resonator structure have been successfully produced. The resonant peak of the fabricated resonator was found at 81.4 MHz with quality factor of 4000 and motional resistance of 89 kω.
KW - Metal-assisted chemical etching
KW - and cantilever
KW - capacitive silicon resonator
UR - http://www.scopus.com/inward/record.url?scp=85071936783&partnerID=8YFLogxK
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U2 - 10.1109/TRANSDUCERS.2019.8808663
DO - 10.1109/TRANSDUCERS.2019.8808663
M3 - Conference contribution
AN - SCOPUS:85071936783
T3 - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
SP - 1639
EP - 1642
BT - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Y2 - 23 June 2019 through 27 June 2019
ER -