Metal-Assisted Chemical Etching Method Subjected to Micro/Nano Device Fabrication

Nguyen Van Toan; Xiaoyue Wang; Naoki Inomata; Masaya Toda; Ioana Voiculescu; Takahito Ono

doi:10.1109/TRANSDUCERS.2019.8808663

Metal-Assisted Chemical Etching Method Subjected to Micro/Nano Device Fabrication

Nguyen Van Toan, Xiaoyue Wang, Naoki Inomata, Masaya Toda, Ioana Voiculescu, Takahito Ono

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work presents the metal-assisted chemical etching (MACE) technique along with applications of this technique in micro/nano systems. In this research the MACE technique was used for the fabrication of simple and complex microelectromechanical systems (MEMS) structure such as; micro-cantilever beam and capacitive silicon resonator respectively. Micro-cantilever beam with resonant frequency of 262 kHz and quality factor of 8100 was successfully fabricated. Nano gaps with 250 nm-width and 7 μm-height together with resonator structure have been successfully produced. The resonant peak of the fabricated resonator was found at 81.4 MHz with quality factor of 4000 and motional resistance of 89 kω.

Original language	English
Title of host publication	2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1639-1642
Number of pages	4
ISBN (Electronic)	9781728120072
DOIs	https://doi.org/10.1109/TRANSDUCERS.2019.8808663
Publication status	Published - 2019 Jun
Event	20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII - Berlin, Germany Duration: 2019 Jun 23 → 2019 Jun 27

Publication series

Name	2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

Conference

Conference	20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Country	Germany
City	Berlin
Period	19/6/23 → 19/6/27

Keywords

Metal-assisted chemical etching
and cantilever
capacitive silicon resonator

ASJC Scopus subject areas

Process Chemistry and Technology
Spectroscopy
Electrical and Electronic Engineering
Mechanical Engineering
Electronic, Optical and Magnetic Materials
Control and Optimization
Instrumentation

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Cite this

Toan, N. V., Wang, X., Inomata, N., Toda, M., Voiculescu, I., & Ono, T. (2019). Metal-Assisted Chemical Etching Method Subjected to Micro/Nano Device Fabrication. In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII (pp. 1639-1642). [8808663] (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2019.8808663

Metal-Assisted Chemical Etching Method Subjected to Micro/Nano Device Fabrication. / Toan, Nguyen Van; Wang, Xiaoyue; Inomata, Naoki ; Toda, Masaya; Voiculescu, Ioana; Ono, Takahito.

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1639-1642 8808663 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Toan, NV, Wang, X, Inomata, N , Toda, M, Voiculescu, I & Ono, T 2019, Metal-Assisted Chemical Etching Method Subjected to Micro/Nano Device Fabrication. in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII., 8808663, 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII, Institute of Electrical and Electronics Engineers Inc., pp. 1639-1642, 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII, Berlin, Germany, 19/6/23. https://doi.org/10.1109/TRANSDUCERS.2019.8808663

Toan NV, Wang X, Inomata N , Toda M, Voiculescu I, Ono T. Metal-Assisted Chemical Etching Method Subjected to Micro/Nano Device Fabrication. In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers Inc. 2019. p. 1639-1642. 8808663. (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII). https://doi.org/10.1109/TRANSDUCERS.2019.8808663

Toan, Nguyen Van ; Wang, Xiaoyue ; Inomata, Naoki ; Toda, Masaya ; Voiculescu, Ioana ; Ono, Takahito. / Metal-Assisted Chemical Etching Method Subjected to Micro/Nano Device Fabrication. 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 1639-1642 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII).

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abstract = "This work presents the metal-assisted chemical etching (MACE) technique along with applications of this technique in micro/nano systems. In this research the MACE technique was used for the fabrication of simple and complex microelectromechanical systems (MEMS) structure such as; micro-cantilever beam and capacitive silicon resonator respectively. Micro-cantilever beam with resonant frequency of 262 kHz and quality factor of 8100 was successfully fabricated. Nano gaps with 250 nm-width and 7 μm-height together with resonator structure have been successfully produced. The resonant peak of the fabricated resonator was found at 81.4 MHz with quality factor of 4000 and motional resistance of 89 kω.",

keywords = "Metal-assisted chemical etching, and cantilever, capacitive silicon resonator",

author = "Toan, {Nguyen Van} and Xiaoyue Wang and Naoki Inomata and Masaya Toda and Ioana Voiculescu and Takahito Ono",

year = "2019",

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doi = "10.1109/TRANSDUCERS.2019.8808663",

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AU - Voiculescu, Ioana

AU - Ono, Takahito

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N2 - This work presents the metal-assisted chemical etching (MACE) technique along with applications of this technique in micro/nano systems. In this research the MACE technique was used for the fabrication of simple and complex microelectromechanical systems (MEMS) structure such as; micro-cantilever beam and capacitive silicon resonator respectively. Micro-cantilever beam with resonant frequency of 262 kHz and quality factor of 8100 was successfully fabricated. Nano gaps with 250 nm-width and 7 μm-height together with resonator structure have been successfully produced. The resonant peak of the fabricated resonator was found at 81.4 MHz with quality factor of 4000 and motional resistance of 89 kω.

AB - This work presents the metal-assisted chemical etching (MACE) technique along with applications of this technique in micro/nano systems. In this research the MACE technique was used for the fabrication of simple and complex microelectromechanical systems (MEMS) structure such as; micro-cantilever beam and capacitive silicon resonator respectively. Micro-cantilever beam with resonant frequency of 262 kHz and quality factor of 8100 was successfully fabricated. Nano gaps with 250 nm-width and 7 μm-height together with resonator structure have been successfully produced. The resonant peak of the fabricated resonator was found at 81.4 MHz with quality factor of 4000 and motional resistance of 89 kω.

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