Mesa- and planar-type InP metal/insulator/ semiconductor field effect transistors with plasma anodic Al2O3 gate oxide

Y. Hirayama, F. Koshiga, T. Sugano

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Mesa- and planar-type InP metal/insulator/semiconductor field effect transistors (MISFETs) were fabricated on iron-doped semi-insulating substrates with plasma anodic Al2O3 as the gate oxide. The characteristics of the MISFETs were measured with a curve tracer and by a pulse method. The effective channel mobilities obtained from these measurements for mesa-type and planar-type devices are 800-2500 cm2 V-1s-1 and 350-500 cm2 V-1s-1 respectively. The drift of the current-voltage characteristics was measured and is discussed.

Original languageEnglish
Pages (from-to)71-76
Number of pages6
JournalThin Solid Films
Volume103
Issue number1-3
DOIs
Publication statusPublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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