Abstract
This paper describes the development of the aluminum nitride (AIN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. This resonator has an air gap between a substrate for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air gap. This technique gives simple process and high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (keff2) of 5.36 % at a resonant frequency of 2 GHz.
Original language | English |
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Pages (from-to) | 1797-1800 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 3 |
Publication status | Published - 2003 Aug 18 |
Event | 2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 2003 Jun 8 → 2003 Jun 13 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering