MEMS based thin film 2 GHz resonator for CMOS integration

Motoaki Hara, Jan Kuypers, Takashi Abe, Masayoshi Esashi

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)


This paper describes the development of the aluminum nitride (AIN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. This resonator has an air gap between a substrate for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air gap. This technique gives simple process and high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (keff2) of 5.36 % at a resonant frequency of 2 GHz.

Original languageEnglish
Pages (from-to)1797-1800
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 2003 Aug 18
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: 2003 Jun 82003 Jun 13

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'MEMS based thin film 2 GHz resonator for CMOS integration'. Together they form a unique fingerprint.

Cite this