TY - JOUR
T1 - Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing
AU - Zahedinejad, Mohammad
AU - Fulara, Himanshu
AU - Khymyn, Roman
AU - Houshang, Afshin
AU - Dvornik, Mykola
AU - Fukami, Shunsuke
AU - Kanai, Shun
AU - Ohno, Hideo
AU - Åkerman, Johan
N1 - Funding Information:
This work was partially supported by the Swedish Research Council (VR grant no. 2016-05980) and the Horizon 2020 research and innovation programmes grant nos. 835068 ‘TOPSPIN’ and 899559 ‘SpinAge’. The work at Tohoku University was supported by the Japan Society for the Promotion of Science Kakenhi grant nos. 17H06093 and 19H05622, JST-CREST grant no. JPMJCR19K3, and RIEC Cooperative Research Projects.
Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer Nature Limited.
PY - 2021
Y1 - 2021
N2 - Synchronization of large spin Hall nano-oscillator (SHNO) arrays is an appealing approach toward ultrafast non-conventional computing. However, interfacing to the array, tuning its individual oscillators and providing built-in memory units remain substantial challenges. Here, we address these challenges using memristive gating of W/CoFeB/MgO/AlOx-based SHNOs. In its high resistance state, the memristor modulates the perpendicular magnetic anisotropy at the CoFeB/MgO interface by the applied electric field. In its low resistance state the memristor adds or subtracts current to the SHNO drive. Both electric field and current control affect the SHNO auto-oscillation mode and frequency, allowing us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate that two individually controlled memristors can be used to tune a four-SHNO chain into differently synchronized states. Memristor gating is therefore an efficient approach to input, tune and store the state of SHNO arrays for non-conventional computing models.
AB - Synchronization of large spin Hall nano-oscillator (SHNO) arrays is an appealing approach toward ultrafast non-conventional computing. However, interfacing to the array, tuning its individual oscillators and providing built-in memory units remain substantial challenges. Here, we address these challenges using memristive gating of W/CoFeB/MgO/AlOx-based SHNOs. In its high resistance state, the memristor modulates the perpendicular magnetic anisotropy at the CoFeB/MgO interface by the applied electric field. In its low resistance state the memristor adds or subtracts current to the SHNO drive. Both electric field and current control affect the SHNO auto-oscillation mode and frequency, allowing us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate that two individually controlled memristors can be used to tune a four-SHNO chain into differently synchronized states. Memristor gating is therefore an efficient approach to input, tune and store the state of SHNO arrays for non-conventional computing models.
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U2 - 10.1038/s41563-021-01153-6
DO - 10.1038/s41563-021-01153-6
M3 - Article
AN - SCOPUS:85120082032
JO - Nature Materials
JF - Nature Materials
SN - 1476-1122
ER -