Memory effect in simple Cu nanogap junction

Hiroshi Suga, Masayo Horikawa, Hisao Miyazaki, Shunsuke Odaka, Kazuhito Tsukagoshi, Tetsuo Shimizu, Yasuhisa Naitoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the resistance switching effect in Cu nanogap junction. Nanogap structures were created by means of electromigration and their electrical properties were measured in a high vacuum chamber. The measured current-voltage characteristics exhibited a clear negative resistance and memory effect with a large on-off ratio of over 105. The estimation from I-V curves indicates that the resistance switching was caused by the gap size change, which implies that the nanogap switching (NGS) effect also occurs in Cu electrodes, a popular wiring material in an integrated circuit.

Original languageEnglish
Title of host publicationMaterials and Physics for Nonvolatile Memories II
PublisherMaterials Research Society
Pages221-226
Number of pages6
ISBN (Print)9781605112237
DOIs
Publication statusPublished - 2010 Jan 1
Externally publishedYes

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1250
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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