Memory design using a one-transistor gain cell on SOI

Takashi Ohsawa, Katsuyuki Fujita, Tomoki Higashi, Yoshihisa Iwata, Takeshi Kajiyama, Yoshiyuki Asao, Kazumasa Sunouchi

    Research output: Contribution to journalArticlepeer-review

    53 Citations (Scopus)


    A 512-kb memory has been developed featuring a one-transistor gain cell of size 7F2(F = 0.18 μm) on SOI. The cell named the floating body transistor cell (FBC) has the ability to achieve a 4F2 cell using self-aligned contact technologies and is proved to be scalable with respect to a cell signal. A basic operation was verified by device simulation and hardware measurement. An array driving method is disclosed which makes selective write possible. A cell signal sensing system consisting of a pair of reference cells written opposite data and comparing the combined current with the doubled cell current is shown to be robust against cell parameter variations in process and temperature. A random access time of 40 ns was simulated. Nondestructive readout and Cb/Cs free signal development drastically improve cell efficiency.

    Original languageEnglish
    Pages (from-to)1510-1522
    Number of pages13
    JournalIEEE Journal of Solid-State Circuits
    Issue number11
    Publication statusPublished - 2002 Nov


    • Capacitor-less DRAM
    • DRAM
    • Embedded memory
    • Floating body transistor cell
    • Gain cell
    • Nondestructive readout
    • Silicon-on-insulator technology

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering


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